NMT2907L99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon;
| 型号： | NMT2907L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
PN2907A
MMBT2907A
PZT2907A
C
C
E
E
C
B
TO-92
C
B
SOT-23
Mark: 2F
B
SOT-223
E
NMT2907
MMPQ2907
B
C2
E
B
E1
E
B
E
C1
B
E
C
C
C
B2
C
C
E2
C
B1
SOT-6
Mark: .2B
C
C
SOIC-16
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
60
V
V
5.0
800
V
Collector Current - Continuous
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ã
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IB
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
60
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
I = 10 A, I = 0
µ
C
E
5.0
V
I = 10 A, I = 0
µ
E
C
VCB = 30 V, VEB = 0.5 V
VCE = 30 V, VBE = 0.5 V
VCB = 50 V, IE = 0
50
50
nA
nA
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
0.02
20
A
A
µ
µ
VCB = 50 V, I = 0, T = 150 C
°
E
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
75
100
100
100
50
300
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
0.4
1.6
1.3
2.6
V
VCE(sat)
VBE(sat)
V
V
V
SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907)
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
200
MHz
pF
Output Capacitance
8.0
30
Cobo
Cibo
Input Capacitance
pF
SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907)
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, IC = 150 mA,
45
10
ns
ns
ns
ns
ns
ns
ton
td
IB1 = 15 mA
40
tr
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
100
80
toff
ts
30
tf
*Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PNP General Purpose Amplifier
(continued)
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2907A
*PZT2907A
PD
Total Device Dissipation
Derate above 25 C
625
5.0
1,000
8.0
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
125
Rθ
C/W
°
JA
Symbol
Characteristic
Max
Units
**MMBT2907A
MMPQ2907
PD
Total Device Dissipation
350
2.8
1,000
8.0
mW
mW/ C
°
Derate above 25 C
°
Thermal Resistance, Junction to Ambient
Effective 4 Die
357
Rθ
C/W
°
C/W
°
C/W
°
JA
125
240
Each Die
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
0.5
0.4
0.3
0.2
0.1
0
V
= 5V
β
= 10
CE
125 °C
25 °C
25 °C
125 ºC
- 40 °C
- 40 ºC
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
1
- 40 ºC
0.8
0.6
0.4
0.2
0
- 40 ºC
25 °C
25 °C
125 ºC
125 ºC
= 10
β
V
= 5V
CE
1
10
100
500
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
20
16
12
8
V
= 35V
CB
1
C
ib
0.1
0.01
4
C
ob
0
25
50
75
100
º
125
0.1
1
10
50
TA- AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
250
200
150
100
50
500
400
300
200
100
0
I
I
c
c
IB1= IB2
=
IB1 = IB2=
10
10
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
r
t
off
t
d
t
on
0
10
100
- COLLECTOR CURRENT (mA)
1000
10
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
Rise Time vs Collector
and Turn On Base Currents
1
0.75
0.5
50
SOT-223
TO-92
20
10
t
= 15 V
r
SOT-23
5
30 ns
60 ns
0.25
0
2
1
10
100
500
0
25
50
75
100
125
150
I
- COLLECTOR CURRENT (mA)
TEMPERATURE (oC)
C
Test Circuits
30 V
200 W
1.0 KW
0
- 16 V
50 W
£200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
15 V
1 KW
37 W
1.0 KW
0
- 30 V
50 W
£200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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