NZD560A [FAIRCHILD]
NPN Low Saturation Transistor; NPN低饱和晶体管
| 型号： | NZD560A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Low Saturation Transistor |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NZD560A
NPN Low Saturation Transistor
•
These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
Sourced from process NA.
•
D-PAK
1.Base 2.Collector 3.Emitter
1
Absolute Maximum Ratings * T =25°C unless otherwise noted
A
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
55
CEO
80
V
CBO
EBO
5
V
I
- Continuous
3
A
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ +150
°C
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation.
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV
BV
BV
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
I
I
I
= 10mA, I = 0
55
80
5
V
V
V
CEO
CBO
EBO
C
E
E
B
= 100µA, I = 0
E
= 100µA, I = 0
C
I
V
V
= 30V, I = 0
100
10
nA
µA
CBO
CB
CB
E
= 30V, I = 0, T = 100°C
E
A
I
Emitter-Base Cutoff Current
V
= 4V, I = 0
10
nA
EBO
EB
C
On Characteristics *
h
DC Current Gain
I
I
I
I
I
= 100mA, V = 2V
70
250
80
25
200
FE
C
C
C
C
C
CE
= 500mA, V = 2V
550
CE
= 1A, V = 2V
CE
= 3A, V = 2V
CE
= 1A, V = 3V
CE
V
(sat)
Collector-Emitter Saturation Voltage
I
I
I
= 1A, I = 100mA
300
400
1.5
mV
mV
V
CE
C
C
C
B
= 2A, I = 200mA
B
= 1A, I = 8mA
B
V
V
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= 1A, I = 100mA
1.25
1
V
V
BE
C
C
B
= 1A, I = 8mA
B
I
= 1A, V = 2V
1
V
BE
C
CE
Small Signal Characteristics
C
Output Capacitance
Transition Frequency
V
= 10V, I = 0, f = 1MHz
30
pF
obo
CB
E
f
I
= 100mA, V = 5V,
75
MHz
T
C
CE
f = 100MHz
* Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
1.5
Units
W
P
Total Device Dissipation
Thermal Resistance, Junction to Ambient
D
R
83
°C/W
θJA
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Typical Characteristics
1000
1000
100
10
Ta=1250C
Ta=1250C
VCE=2V
VCE=3V
Ta=250C
Ta=-400C
Ta=-400C
Ta=250C
100
10
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. DC Current Gain
10
1
IC=10IB
IC=10IB
Ta=250C
Ta=-250C
1
Ta=1250C
Ta=1250C
Ta=250C
0.1
Ta=-400C
0.01
1E-3
0.1
0.1
0.01
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Colletor-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
3
80
VCE=2V
IE=0,f=1MHZ
70
60
50
40
30
20
10
0
2
1250C
-400C
250C
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Typical Characteristics (Continued)
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
Package Dimensions
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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