NZT45C11L99Z [FAIRCHILD]
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;
| 型号： | NZT45C11L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin |
| 文件： | 总3页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D45C11
NZT45C11
C
E
B
C
C
E
B
TO-220
SOT-223
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P. See
NZT751 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
IC
Collector-Emitter Voltage
80
V
A
Collector Current - Continuous
4.0
Operating and Storage Junction Temperature Range
-55 to +150
°
C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D45C11
*NZT45C11
PD
Total Device Dissipation
60
480
1.2
9.7
W
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Case
2.1
°
Rθ
C/W
JC
Thermal Resistance, Junction to Ambient
62.5
103
°
C/W
Rθ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
PNP Current Driver
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 100 mA, IB = 0
60
V
Voltage
ICES
IEBO
Collector-Cutoff Current
VCB = 90 V, IE = 0
VEB = 5.0 V, IC = 0
10
µ
µ
A
Emitter-Cutoff Current
100
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.2 A, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 50 mA
40
20
120
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
1.3
V
VCE(sat)
VBE(sat)
IC = 1.0 A, IB = 100 mA
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 4.0 V,
32
MHz
fT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
VCX™
QS™
FACT Quiet Series™
FAST
FASTr™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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