NZT660A_NL [FAIRCHILD]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
| 型号： | NZT660A_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
•
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
CEO
Parameter
NZT660
NZT660A
Units
V
V
V
Collector-Emitter Voltage
60
60
V
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
80
60
V
CBO
EBO
5
5
V
I
- Continuous
3
3
A
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ +150
- 55 ~ +150
°C
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
Off Characteristics
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage
I
I
= 10mA
CEO
C
C
60
V
BV
Collector-Base Breakdown Voltage
= 100µA
NZT660
NZT660A
CBO
80
60
V
V
BV
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
= 100µA
EBO
E
5
V
I
V
V
= 30V
CBO
CB
CB
100
10
nA
µA
= 30V, T = 100°C
A
I
Emitter-Base Cutoff Current
V
= 4V
EBO
EB
100
nA
On Characteristics *
DC Current Gain
h
I
I
= 100mA, V = 2V
FE
C
C
CE
70
100
250
80
= 500mA, V = 2V
NZT660
NZT660A
300
550
CE
I
I
= 1A, V = 2V
C
C
CE
= 3A, V = 2V
25
CE
©2005 Fairchild Semiconductor Corporation
NZT660/NZT660A Rev. C3
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted (Continued)
a
Symbol
CE(sat)
Parameter
Collector-Emitter Saturation Voltage
Test Conditions
Min.
Typ. Max. Units
V
I
I
= 1A, I = 100mA
C
C
B
300
550
500
mV
mV
mV
= 3A, I = 300mA
NZT660
B
NZT660A
V
V
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= 1A, I = 100mA
B
BE(sat)
BE(on)
C
C
1.25
1
V
V
= 1A, V = 2V
CE
Small Signal Characteristics
C
Output Capacitance
V
= 10V, I = 0, f = 1MHz
CB E
obo
45
pF
f
Transition Frequency
I = 100mA, V = 5V, f = 100MHz
C CE
T
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
NZT660/NZT660A
Units
W
P
Total Device Dissipation
2
D
R
Thermal Resistance, Junction to Ambient
62.5
°C/W
θJA
2
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Figure 2. Base-Emitter On Voltage
vs Collector Current
1.6
1.4
1.2
1
1.4
Vce = 2.0V
β = 10
1.2
1
- 40°C
- 40°C
0.8
0.8
0.6
0.4
0.2
25°C
0.6
25°C
125°C
0.4
125°C
0.2
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
400
0.8
f = 1.0MHz
β = 10
350
300
250
200
150
100
50
0.7
Cobo
0.6
125°C
0.5
25°C
0.4
0.3
Cibo
- 40°C
0.2
0.1
0
0
0.1
0.5
1
10 20
50 100
0.01
0.1
1
10
VCE - COLLECTOR VOLTAGE (V)
I C - COLLECTOR CURRENT (A)
Figure 5. Current Gain vs Collector Current
1000
Vce = 2.0V
125°C
900
800
700
600
25°C
500
400
300
- 40°C
200
100
0
0.0001
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
3
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
Mechanical Dimensions
SOT-223
3.00 0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 0.25
0.70 0.10
(0.95)
°
~10
°
0
+0.10
–0.05
(0.95)
0.25
6.50 0.20
Dimensions in Millimeters
4
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
FAST®
IntelliMAX™
ISOPLANAR™
LittleFET™
POP™
SPM™
A
CEx™
FASTr™
Power247™
Stealth™
ActiveArray™
Bottomless™
CoolFET™
FPS™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
FRFET™
GlobalOptoisolator™
GTO™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
CROSSVOLT™
DOME™
HiSeC™
QS™
EcoSPARK™
I2C™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
E2CMOS™
i-Lo™
MSXPro™
EnSigna™
ImpliedDisconnect™
OCX™
FACT™
OCXPro™
FACT Quiet Series™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
UltraFET®
Across the board. Around the world.™
SILENT SWITCHER®
SMART START™
UniFET™
The Power Franchise®
VCX™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
相关型号：
NZT660D84Z
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
FAIRCHILD
NZT660_NL
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
FAIRCHILD
NZT6714D84Z
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
NZT6714L99Z
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
NZT6714S62Z
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
NZT6714_NL
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-4
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明