PN2222ARP [FAIRCHILD]
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,;
| 型号： | PN2222ARP |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
| 文件： | 总5页 (文件大小：682K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2008
PN2222A/MMBT2222A/PZT2222A
NPN General Purpose Amplifier
•
•
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
Sourced from process 19.
MMBT2222A
PZT2222A
PN2222A
C
C
E
E
C
B
TO-92
SOT-23
Mark:1P
SOT-223
B
E B C
Absolute Maximum Ratings *
T = 25×C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
75
V
V
VCBO
VEBO
IC
6.0
V
1.0
A
TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T = 25°C unless otherwise noted
a
Max.
Symbol
Parameter
Units
PN2222A
*MMBT2222A
**PZT2222A
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
PD
RqJC
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
357
125
* Device mounted on FR-4 PCB 1.6” ´ 1.6” ´ 0.06”.
2
** Device mounted on FR-4 PCB 36mm ´ 18mm ´ 1.5mm; mounting pad for the collector lead min. 6cm .
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0
1
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0
40
75
V
V
BV(BR)CBO Collector-Base Breakdown Voltage
BV(BR)EBO Emitter-Base Breakdown Voltage
IC = 10mA, IE = 0
IE = 10mA, IC = 0
6.0
V
ICEX
ICBO
Collector Cutoff Current
Collector Cutoff Current
VCE = 60V, VEB(off) = 3.0V
10
nA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, Ta = 125°C
0.01
10
mA
mA
IEBO
IBL
Emitter Cutoff Current
Base Cutoff Current
VEB = 3.0V, IC = 0
10
20
nA
nA
VCE = 60V, VEB(off) = 3.0V
On Characteristics
hFE
DC Current Gain
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
35
50
IC = 10mA, VCE = 10V
75
IC = 10mA, VCE = 10V, Ta = -55°C
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 10V *
IC = 500mA, VCE = 10V *
35
100
50
300
40
VCE(sat)
Collector-Emitter Saturation Voltage * IC = 150mA, VCE = 10V
0.3
1.0
V
V
IC = 500mA, VCE = 10V
VBE(sat)
Base-Emitter Saturation Voltage *
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
0.6
1.2
2.0
V
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
300
MHz
pF
Cobo
Cibo
rb’Cc
NF
Output Capacitance
Input Capacitance
8.0
25
VEB = 0.5V, IC = 0, f = 1MHz
pF
Collector Base Time Constant
Noise Figure
IC = 20mA, VCB = 20V, f = 31.8MHz
150
4.0
pS
IC = 100mA, VCE = 10V,
RS = 1.0KW, f = 1.0KHz
dB
Re(hie)
Real Part of Common-Emitter
IC = 20mA, VCE = 20V, f = 300MHz
60
W
High Frequency Input Impedance
Switching Characteristics
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 30V, VEB(off) = 0.5V,
IC = 150mA, IB1 = 15mA
10
25
ns
ns
ns
ns
ts
tf
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
225
60
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Spice Model
NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0
Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6
Vtf = 1.7 Xtf = 3 Rb = 10)
© 2007 Fairchild Semiconductor Corporation
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0
www.fairchildsemi.com
2
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
0.3
0.2
0.1
b = 10
125°C
°C
25
°C
- 40
1
10
100
500
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
b
= 10
1
0.8
0.6
0.4
- 40°C
25°C
°C
125
1
10
100
500
IC
I- COLLECTOR CURRENT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
= 40V
CB
10
1
0.1
25
50
75
100
125
150
°
TA - AMBIENT TEMPERATURE ( C)
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Figure 5. Collector Cutoff Current
vs Ambient Temperature
© 2007 Fairchild Semiconductor Corporation
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0
www.fairchildsemi.com
3
Typical Characteristics
IC
IC
Figure 1. Turn On and Turn Off Times
vs Collector Current
Figure 2. Switching Times vs Collector Current
Power Dissipation vs
Common Emitter Characteristics
Ambient Temperature
8
1
V
T
= 10 V
= 25oC
CE
A
SOT-223
6
4
2
0
0.75
TO-92
h
oe
0.5
SOT-23
h
h
re
fe
0.25
0
h
ie
0
10
20
30
40
50
60
0
25
50
75
100
125
150
TEMPERATURE (oC)
I C - COLLECTOR CURRENT (mA)
Figure 4. Common Emitter Characteristics
Figure 3. Power Dissipation vs
Ambient Temperature
Common Emitter Characteristics
Common Emitter Characteristics
1.3
2.4
2
I
= 10 mA
T
= 25oC
A
V
I
= 10 V
= 10 mA
C
CE
h
1.25
1.2
fe
h
C
re
h
ie
1.15
1.1
h
fe
1.6
1.2
0.8
0.4
0
h
ie
1.05
1
h
oe
h
h
0.95
0.9
re
0.85
0.8
oe
0.75
0
20
40
60
80
100
0
5
10
15
20
25
30
35
TA - AMBIENT TEMPERATURE (oC)
VCE - COLLECTOR VOLTAGE (V)
Figure 5. Common Emitter Characteristics
Figure 6. Common Emitter Characteristics
© 2007 Fairchild Semiconductor Corporation
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0
www.fairchildsemi.com
4
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Power247®
SuperSOT™-8
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
FAST®
FastvCore™
FPS™
FRFET®
OPTOPLANAR®
®
UniFET™
VCX™
PDP-SPM™
Power220®
Global Power ResourceSM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0
www.fairchildsemi.com
5
相关型号：
PN2222ATFR
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明