PN2907 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | PN2907 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
PN2907
MMBT2907
C
E
TO-92
C
B
B
SOT-23
Mark: 2B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
60
V
V
5.0
800
V
Collector Current - Continuous
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2907
*MMBT2907
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
200
357
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V
5.0
V
50
50
nA
nA
IB
Base Cutoff Current
VBE = 0.5 V
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150 °C
20
20
nA
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
35
50
75
100
30
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.4
1.6
1.3
2.6
V
V
V
V
VCE(sat)
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, f = 1.0 MHz
VEB = 2.0 V, f = 1.0 MHz
8.0
30
pF
pF
Cob
Cib
hfe
Input Capacitance
Small-Signal Current Gain
IC = 50 mA, VCE = 20 V,
f = 100 MHz
2.0
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA , PW = 200 ns
45
10
ns
ns
ns
ns
ns
ns
ton
td
40
tr
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
100
80
toff
ts
30
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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