PN3565 [FAIRCHILD]

NPN General Purpose Amplifier; NPN通用放大器
PN3565
型号: PN3565
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN General Purpose Amplifier
NPN通用放大器

晶体 放大器 晶体管
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中文:  中文翻译
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Discr ete P OWER & Sign a l  
Tech n ologies  
PN3565  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced from  
Process 10. See PN100 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
25  
30  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN3565  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Rθ  
Thermal Resistance, Junction to Case  
83.3  
°C/W  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  
NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage* IC = 2.0 mA, IB = 0  
25  
30  
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IC = 100 µA, IE = 0  
IE = 10 µA, IC = 0  
VCB = 25 V, IE = 0  
6.0  
V
50  
nA  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
VCE = 10 V, IC = 1.0 mA  
IC = 1.0 mA, IB = 0.1 mA  
150  
600  
Collector-Emitter Saturation Voltage  
0.35  
V
VCE(sat)  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 5.0 V  
4.0  
20  
pF  
Cob  
Input Impedance  
IC = 1.0 mA, VCE = 5.0 V,  
f = 1.0 kHz  
IC = 1.0 mA, VCE = 5.0 V,  
f = 1.0 kHz  
IC = 1.0 mA, VCE = 5.0 V,  
f = 20 MHz  
2.0  
0.5  
kΩ  
h
ie  
Output Admittance  
35  
µmhos  
hoe  
hfe  
Small-Signal Current Gain  
2.0  
12  
IC = 1.0 mA, VCE = 5.0 V,  
f = 1.0 kHz  
120  
750  
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  

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