PN930D75Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;
| 型号： | PN930D75Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 放大器 晶体管 |
| 文件： | 总4页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN930
NPN General Purpose Amplifier
•
This device is designed for low noise, high gain, general purpose
applications at collector currents from 1µA to 50mA.
TO-92
1. Emitter 2. Base 3. Collector
1
Absolute Maximum Ratings* T =25°C unless otherwise noted
A
Symbol
Parameter
Value
45
Units
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
V
V
CEO
45
CBO
EBO
5.0
V
I
- Continuous
100
mA
°C
C
T
T
Operating and Storage Junction Temperature Range
- 55 ~ 150
J, STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
= 10mA, I = 0
45
45
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CEO
C
B
I
I
= 10µA, I = 0
E
C
E
= 10nA, I = 0
5.0
V
C
I
I
I
V
V
= 5.0V
2.0
10
nA
nA
CE
CB
Collector Cutoff Current
= 45V, I = 0
E
CBO
Collector Cutoff Current
V
V
= 45V, I = 0
10
10
nA
µA
CES
CB
CB
E
= 45V, I = 0, T = 170°C
E
A
I
Emitter Cutoff Current
V
= 5.0V, I = 0
10
nA
EBO
EB
C
On Characteristics
h
DC Current Gain
V
V
V
V
= 5.0V, I = 10µA
10
20
150
300
FE
CE
CE
CE
CE
C
= 5.0V, I = 10µA, T = -55°C
C
A
= 5.0V, I = 500µA
C
= 5.0V, I = 10mA
600
1.0
1.0
C
V
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
= 10mA, I = 0.5mA
V
V
CE
C
B
(sat)
I
= 10mA, I = 0.5mA
0.6
BE
C
B
Small Signal Characteristics
C
Output Capacitance
V
= 5.0V, f = 1.0MHz
8.0
pF
ob
fe
CB
h
Small Signal Current Gain
I
I
= 500µA, V = 5.0V, f = 20MHz
1.5
150
C
C
CE
= 1.0mA, V = 5.0V, f = 1.0KHz
600
32
CE
h
h
h
Input Impedance
Voltage Feedback Ratio
Output Admittance
Noise Figure
I
= 1.0mA, V = 5.0V, f = 1.0KHz
25
Ω
ib
C
CE
-6
600
1.0
3.0
x10
µmho
dB
rb
ob
NF
V
= 5.0V, I = 10µA
CE C
R
= 10KΩ, B = 15.7KHz
W
G
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
θJC
θJA
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 ±0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27 ±0.20
]
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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