概述
数据手册QEB373_06 概述
Subminiature Plastic Infrared Emitting Diode 超小型塑料红外发光二极管
QEB373_06 数据手册
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PDF下载September 2006
QEB373
tm
Subminiature Plastic Infrared Emitting Diode
Features
■ T-3/4 (2mm) Surface Mount Package
■ Tape & Reel Option (See Tape & Reel Specifications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
■ Narrow Emission Angle, 24°
■ Wavelength = 880nm, AlGaAs
■ Clear Lens
■ Matched Photosensor: QSB363
■ High Radiant Intensity
Package Dimensions
CATHODE
0.276 (7.0)
MIN
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
0.016 (0.4)
0.019 (0.5)
0.012 (0.3)
0.074 (1.9)
Schematic
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
0.055 (1.4)
0.008 (0.21)
0.004 (0.11)
CATHODE
0.024 (0.6)
0.106 (2.7)
0.091 (2.3)
Notes:
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.2ꢀ) on all non nominal dimensions unless otherwise specified.
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
Absolute Maximum Ratings (T = 2ꢀ°C unless otherwise specified)
A
Symbol
Parameter
Rating
-40 to +100
-40 to +100
240 for ꢀ sec
260 for 10 sec
ꢀ0
Unit
°C
T
Operating Temperature
Storage Temperature
OPR
T
°C
STG
(2,3,4)
T
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
°C
SOL-I
(2,3)
T
°C
SOL-F
I
mA
V
F
V
P
ꢀ
R
D
(1)
Power Dissipation
100
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 2ꢀ°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T = 2ꢀ°C)
A
Symbol
Parameter
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Test Conditions
Min.
Typ.
880
12
Max.
Units
λ
I = 100mA
nm
°
P
F
Θ
I = 100mA
F
V
I = 100mA, t = 20ms
1.7
V
F
F
p
I
V = ꢀV
100
µA
R
R
I
I = 100mA, tp = 20ms
16
mW/sr
ns
e
F
t
I = 100mA
800
800
r
F
t
Fall Time
t = 20ms
ns
f
p
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
2
Typical Performance Curves
Fig. 1 Maximum Forward Current vs.
Temperature
Fig. 2 Relative Radiant Intensity vs.
Wavelength
200
160
120
80
100
IF = 20 mA
TA = 25˚C
80
60
40
20
40
0
-25
0
25
50
75 85 100
0
880 900 920 940 960 980 1000 1020 1040
Ambient Temperature T (˚C)
A
Wavelength λ (nm)
Fig. 3 Peak Emission Wavelength vs.
Fig. 4 Forward Current vs.
Ambient Temperature
Forward Voltage
500
980
200
100
960
940
920
50
20
10
5
900
2
1
-25
0
25
50
75
100
Ambient Temperature T (˚C)
A
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage V (V)
F
Fig. 5 Relative Radiant Flux vs.
Ambient Temperature
20
Fig. 6 Relative Radiant Intensity vs.
Angular Displacement
10
30
20
10
0
10
20
30
5
40
50
40
50
2
1
0.5
60
70
60
70
0.2
0.1
80
90
80
90
0.6
0.4
0.2
0
0.2
0.4
0.6
-25
0
25
50
75
100
Ambient Temperature T (˚C)
Ambient Temperature T (˚C)
A
A
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
3
Surface Mount Options for T-3/4 Package
Features
■ Three lead forming options: Gull Wing, Yoke and Z-Bend
■ Compatible with automatic placement equipment
■ Supplied on tape and reel or in bulk packaging
■ Compatible with vapor phase reflow solder processes
Gull Wing Lead Configuration
Yoke Lead Configuration
0.283 (7.2)
0.098 (2.5)
0.166 (4.2)
0.016 (0.4)
0.016 (0.4)
CATHODE
CATHODE
0.020 (0.51)
0.020 (0.5)
0.074 (1.9)
0.087 (2.2)
0.071 (1.8)
0.087 (2.2)
0.071 (1.8)
0.074 (1.9)
0.024 (0.6)
0.118 (3.0)
0.102 (2.6)
0.031 (0.8)
0.078 (2.0)
0.043 (1.1)
.118 (3.0)
.102 (2.6)
0.055 (1.4)
0.055 (1.4)
0.051 (1.3)
0.043 (1.1)
0.008 (0.2)
0.005 (0.13)
0.106 (2.7)
0.091 (2.3)
0.141 (3.6)
Z-Bend Lead Configuration
0.236 (6.0)
0.220 (5.6)
0.177 (4.5)
0.161 (4.1)
0.127 (3.25)
0.112 (2.85)
0.016 (0.4)
CATHODE
0.020 (0.5)
0.087 (2.2)
0.071 (1.8)
0.074 (1.9)
0.024 (0.6)
0.031 (0.8)
0.080 (2.0)
0.043 (1.1)
.118 (3.0)
.102 (2.6)
0.055 (1.4)
0.106 (2.7)
0.091 (2.3)
Notes: (Applies to all package drawings)
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.2ꢀ) on all non nominal dimensions unless otherwise specified.
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
SILENT SWITCHER
SMART START™
SPM™
UniFET™
UltraFET
VCX™
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
®
HiSeC™
Stealth™
Wire™
2
I C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
EcoSPARK™
2
E CMOS™
®
EnSigna™
FACT™
PowerTrench
®
QFET
®
FAST
QS™
FASTr™
FPS™
FRFET™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TinyPWM™
TinyPower™
®
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
Across the board. Around the world.™
The Power Franchise
®
ScalarPump™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
www.fairchildsemi.com
ꢀ
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