QED222 [FAIRCHILD]
PLASTIC INFRARED LIGHT EMITTING DIODE; 塑料红外发光二极管
| 型号： | QED222 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC INFRARED LIGHT EMITTING DIODE |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE
0.305 (7.75)
SURFACE
0.040 (1.02)
NOM
0.800 (20.3)
MIN
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
SCHEMATIC
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
ANODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
CATHODE
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package.
FEATURES
• != 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Medium Wide Emission Angle, 40°
• High Output Power
• Package material and color: Clear, purple tinted, plastic
2001 Fairchild Semiconductor Corporation
DS300337
12/07/01
1 OF 4
www.fairchildsemi.com
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
(T = 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
A
Parameter
Operating Temperature
Symbol
TOPR
Rating
Unit
°C
°C
°C
°C
mA
V
-40 to +100
-40 to +100
Storage Temperature
TSTG
Soldering Temperature (Iron) (2,3,4)
Soldering Temperature (Flow) (2,3)
Continuous Forward Current
Reverse Voltage
TSOL-I
TSOL-F
IF
240 for 5 sec
260 for 10 sec
100
5
VR
Power Dissipation (1)
Peak Forward Current (5)
PD
200
1.5
mW
A
IF(Peak)
(TA =25°C)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF = 100 mA
SYMBOL
MIN
—
—
—
—
10
16
25
—
—
TYP
880
±20
—
MAX
—
UNITS
nm
Peak Emission Wavelength
Emission Angle
!
PE
IF = 100 mA
"
—
Deg.
V
Forward Voltage
IF = 100 mA, tp = 20 ms
VR = 5 V
VF
IR
IE
IE
IE
tr
1.7
10
20
32
—
Reverse Current
—
µA
Radiant Intensity QED221
Radiant Intensity QED222
Radiant Intensity QED223
Rise Time
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
—
mW/sr
mW/sr
mW/sr
ns
—
—
800
800
—
IF = 100 mA
Fall Time
tf
—
ns
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 µS, T = 10 ms.
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2 OF 4
12/07/01 DS300337
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
Fig. 2 Coupling Characteristics of QED22X with QSD12X
Fig. 1 Normalized Radiant Intensity vs. Input Current
1
10
1
Normalized to:
Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%
I = 100 mA, T = 25˚C
F
A
I
= 100 mA
F
Pulse Width = 100 µs
0.8
0.6
0.4
0.2
0
V
R
= 5 V
= 100 Ω
= 25˚C
CC
L
T
A
I
= 20 mA
F
0.1
0.01
0.001
0
1
2
3
4
5
6
1
10
100
1000
LENS TIP SEPERATION (INCHES)
I
- INPUT CURRENT (mA)
F
Fig. 4 Normalized Radiant Intensity vs. Wavelength
Fig. 3 Forward Voltage vs. Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.5
2
I
= 100 mA
F
I
= 50 mA
F
1.5
1
I
= 10 mA
I
= 20 mA
F
F
0.5
0
Pulse Width = 100 µs
Duty Cycle = 0.1%
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100
T
- TEMPERATURE (˚C)
A
775
800
825
850
875
900
925
950
λ (nm)
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Radiation Pattern
1000
100
T
= 25˚C
A
0˚
10
-10
20
-20
30
-30
40
-40
50
-50
60
-60
-70
10
1
70
80
-80
90
-90
100
80
60
40
20
0
20
40
60
80
100
4
1
2
3
V
- FORWARD VOLTAGE (V)
F
DS300337
12/07/01
3 OF 4
www.fairchildsemi.com
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
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12/07/01 DS300337
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