RF1S60P03SM [FAIRCHILD]
60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs; 60A ， 30V ，额定雪崩， P沟道增强型功率MOSFET
| 型号： | RF1S60P03SM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFG60P03, RFP60P03,
RF1S60P03, RF1S60P03SM
S E M I C O N D U C T O R
60A, 30V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
December 1995
Features
Packages
JEDEC STYLE TO-247
SOURCE
• 60A, 30V
• rDS(ON) = 0.027Ω
DRAIN
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
DRAIN
(BOTTOM
SIDE METAL)
• +175oC Operating Temperature
Description
The
RFG60P03,
RFP60P03,
RF1S60P03
and
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
PACKAGE AVAILABILITY
PART NUMBER
RFG60P03
PACKAGE
TO-247
BRAND
RFG60P03
RFP60P03
F1S60P03
F1S60P03
RFP60P03
TO-220AB
TO-262AA
TO-263AB
JEDEC TO-262AA
RF1S60P03
SOURCE
DRAIN
GATE
RF1S60P03SM
DRAIN
(FLANGE)
NOTE: When ordering use the entire part number.
Formerly developmental type TA49045.
Symbol
D
JEDEC TO-263AB
M
A
DRAIN
(FLANGE)
G
GATE
SOURCE
S
o
Absolute Maximum Ratings T = +25 C
C
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
-30
-30
±20
V
V
V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
GS
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
60
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Refer to Peak Current Curve
Refer to UIS Curve
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
o
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
176
1.17
W
C
D
o
o
Derate above +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
W/ C
T
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
-55 to +175
C
J
STG
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
File Number 3951.1
Copyright © Harris Corporation 1995
4-51
Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
o
Electrical Specifications
PARAMETERS
T
= +25 C, Unless Otherwise Specified.
C
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
UNITS
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
I
-30
-2
-
-
-
-4
DSS
D
GS
V
V
= V , I = 250µA
-
-
V
GS(TH)
GS
DS
D
o
Zero Gate Voltage Drain Current
I
V
V
= -30V,
= 0V
T
T
= +25 C
-1
µA
µA
nA
Ω
DSS
GSS
DS
GS
C
C
o
= +150 C
-
-
-50
100
0.027
140
-
Gate-Source Leakage Current
On Resistance
I
V
= ±20V
-
-
GS
r
I
= 60A, V = -10V
-
-
DS(ON)
D
GS
Turn-On Time
t
V
= -15V, I = 60A
-
-
ns
ON
DD
D
R = 0.25Ω, V = -10V
L
GS
Turn-On Delay Time
Rise Time
t
R
= 2.5Ω
-
20
75
35
40
-
ns
D(ON)
GS
t
-
-
ns
R
Turn-Off Delay Time
Fall Time
t
-
-
ns
D(OFF)
t
-
-
ns
F
Turn-Off Time
t
-
115
230
120
9
ns
OFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
V
V
V
V
= 0 to -20V
V = -24V,
DD
-
190
100
7.5
3000
1500
525
-
nC
nC
nC
pF
pF
pF
G(TOT)
GS
GS
GS
DS
I
= 60A,
D
Q
= 0 to -10V R = 0.4Ω
-
G(-10)
L
Q
= 0 to -2V
-
G(TH)
C
= -25V, V = 0V
-
-
ISS
OSS
RSS
GS
f = 1MHz
C
-
-
C
-
-
o
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
-
0.85
80
C/W
θJC
θJA
o
-
-
C/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
= -60A
MIN
TYP
MAX
UNITS
V
V
I
I
-
-
-
-
-1.75
200
SD
RR
SD
t
= -60A, dI /dt = -100A/µs
ns
SD
SD
4-52
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
TC = +25oC
10
-500
-100
100µs
1ms
1
0.5
PDM
10ms
0.2
0.1
-10
-1
0.1
100ms
DC
0.05
t1
t2
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
0.02
0.01
NOTES:
DUTY FACTOR: D = t1/t2
VDSS MAX = -30V
-10
PEAK TJ = PDM x Z JC + TC
SINGLE PULSE
10-4 10-3
t , RECTANGULAR PULSE DURATION (s)
θ
0.01
10-5
10-2
10-1
100
101
-1
-60
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
TC = +25oC
-70
-60
-50
-40
-30
-103
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175 – T
C
-----------------------
150
VGS = -20V
I = I
25
-20
VGS = -10V
TRANSCONDUCTANCE
-102
-50
-10
0
MAY LIMIT CURRENT
IN THIS REGION
25
50
75
100
125
150
175
10-6
10-5
10-4
10-3
10-2
10-1
100
101
TC , CASE TEMPERATURE (oC)
t , PULSE WIDTH (ms)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
PULSE DURATION = 250µs, TC = +25oC
V
DD = -15V
-120
-90
-120
-55oC
+25oC
VGS = -20V
VGS = -10V
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-90
-60
VGS = -8V
VGS = -7V
+175oC
-60
VGS = -6V
VGS = -5V
-30
0
-30
0
VGS = -4.5V
0.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
-1.5
-3.0
-4.5
-6.0
-7.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
4-53
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, VGS = -10V, ID = -60A
VGS = VDS, ID = - 250µA
2.0
1.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 7. NORMALIZED r
vs JUNCTION
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
DS(ON)
TEMPERATURE
ID = -250µA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS
-10.0
-30.0
-22.5
-15.0
-7.5
VGS = 0V, f = 1MHz
5000
VDD = BVDSS
VDD = BVDSS
-7.5
-5.0
-2.5
0.0
4000
CISS
RL = 0.5Ω
G(REF) = -3mA
I
3000
V
GS = -10V
COSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
2000
0.50 BVDSS
0.25 BVDSS
CRSS
1000
0
0.0
IG(REF)
IG(REF)
0
-5
-10
-15
-20
-25
t, TIME (µs)
20
80
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
IG(ACT)
IG(ACT)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
4-54
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves (Continued)
-200
-100
STARTING TJ = +25oC
STARTING TJ = +150oC
If R = 0
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD
)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
VDS
BVDSS
tP
L
VDS
IAS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
-
DUT
RG
VDD
+
0V
tP
IL
tAV
0.01Ω
VGS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tD(ON)
tOFF
tD(OFF)
VDD
tR
tF
10%
RL
VDS
10%
VDS
90%
90%
0V
DUT
VGS
10%
50%
VGS
RGS
50%
90%
PULSE WIDTH
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-55
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Temperature Compensated PSPICE Model for the
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
.SUBCKT RFP60P03 2 1 3
REV 6/21/94
CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
ESG
DRAIN
2
LDRAIN
10
5
+
-
8
6
EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
RDRAIN
+
DPLCAP
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
17
18
16
EBREAK
MOS2
VTO
6
DBODY
-
-
EVTO
GATE
1
RGATE
9
21
-
IT 8 17 1
18
11
MOS1
8
20
LGATE
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9
DBREAK
RIN
CIN
RSOURCE
LSOURCE
8
7
3
SOURCE
S1A
S2A
14
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
12
RBREAK
15
13
17
18
8
13
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1
S1B
S2B
RVTO
19
13
+
CA
CB
IT
14
+
-
6
8
5
8
VBAT
+
EGS
EDS
-
-
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.92
.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
4-56
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