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元器件品牌
RF1S70N06SM
[FAIRCHILD]
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs; 70A ， 60V ，额定雪崩， N沟道增强型功率MOSFET
元器件型号：
RF1S70N06SM
生产厂家：
FAIRCHILD SEMICONDUCTOR
描述和应用：
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
70A ， 60V ，额定雪崩， N沟道增强型功率MOSFET
晶体 晶体管 功率场效应晶体管 开关
PDF文件：
总6页 (文件大小：94K)
下载文档：
下载PDF数据表文档文件
型号参数：RF1S70N06SM参数
查看货源
RF1S70N06SM9A
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB
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26
ETC
RF1S740AST
10A 400V 0.550 Ohm N-Channel SMPS Power MOSFET(151.36 k)
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9
ETC
RF1S9530
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
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RENESAS
RF1S9530
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
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ROCHESTER
RF1S9530SM
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
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89
INTERSIL
RF1S9530SM
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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0
FAIRCHILD
RF1S9530SM
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263A, 3 PIN
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0
ROCHESTER
RF1S9530SM9A
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263A, 3 PIN
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0
RENESAS
RF1S9530SM9A
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Warning
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156
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0
FAIRCHILD
RF1S9540
P-CHANNEL POWER MOSFETS
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33
HARRIS
RF1S9540
P-CHANNEL POWER MOSFETS
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30
HARRIS
RF1S9540SM
P-CHANNEL POWER MOSFETS
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46
HARRIS
RF1S9540SM
P-CHANNEL POWER MOSFETS
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156
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10
HARRIS
RF1S9540SM
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
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73
INTERSIL
RF1S9540SM
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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0
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