RMPA5255 [FAIRCHILD]
4.9-5.9 GHz WLAN Linear Power Amplifier Module; 4.9-5.9 GHz的WLAN线性功率放大器模块
| 型号： | RMPA5255 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 4.9-5.9 GHz WLAN Linear Power Amplifier Module |
| 文件： | 总7页 (文件大小：783K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2005
RMPA5255
4.9–5.9 GHz WLAN Linear Power Amplifier Module
Features
Description
■ Full 4.9 to 5.9 GHz operation
The RMPA5255 power amplifier module is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The 10 pin, 5 x 5 x 1.5 mm package with internal match-
ing on both input and output to 50Ω, and internal bias network
components, allow for extremely simplified integration. An on-
chip detector provides power sensing capability. The PA’s low
power consumption and excellent linearity are achieved using
our InGaP Heterojunction Bipolar Transistor (HBT) technology.
■ 34 dB small signal gain
■ 230 mA total current at 18 dBm modulated power out
■ 2.3% EVM at 18 dBm modulated power out
■ 3.3 V collector supply voltage
■ Integrated power detector with 20 dB dynamic range
■ RoHS compliant 5 x 5 x 1.5 mm leadless package
■ Internally matched to 50Ω and DC blocked RF
input/output
■ Internal DC bias de-coupling
■ Optimized for use in 802.11a applications
Device
Electrical Characteristics1 802.11a OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min
4.9
Typ
Max
5.9
Units
GHz
V
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
3.0
3.3
2.9
26
3.6
V
mA
dB
33
Total Current @ 18dBm Pout
230
2.3
450
5
mA
%
2
EVM @ 18dBm Pout
Detector Output @ 18dBm Pout
mV
dBm
3
Detector Threshold
Notes:
1. VCC = 3.3V, VPC = 2.9V, T = 25°C, PA is constantly biased, 50Ω system.
A
2. Percentage includes system noise floor of EVM = 0.8%.
3.
P
measured at P corresponding to power detection threshold.
OUT IN
©2005 Fairchild Semiconductor Corporation
RMPA5255 Rev. E
1
www.fairchildsemi.com
Electrical Characteristics1 Single Tone
Parameter
Min
4.9
Typ
Max
5.9
Units
GHz
V
Frequency
Supply Voltage (VCC)
Power Control Voltage (VPC)
Gain
3.0
3.3
2.9
33.5
160
26
3.6
2.6
3.1
V
dB
Total Quiescent Current
mA
mA
dBm
mA
µA
2
Bias Current at pin VPC
P1dB Compression
26
Current @ P1dB Compression
Shutdown Current (VPC = 0V)
Input Return Loss
508
<1.0
12
dB
Output Return Loss
20
dB
Detector Output at P1dB Compression
1.1
5
V
4
Detector Pout Threshold
V
3
Turn-On Time
<1.0
µS
Notes:
1. VCC = 3.3V, VPC = 2.9V, T = 25°C, PA is constantly biased, 50Ω system.
A
2. Power Control bias current is included in the total quiescent current.
3. Measured from Device On signal turn on, (Logic Low) to the point where RF P
stabilizes to 0.5dB.
OUT
4.
P
measured at P corresponding to power detection threshold.
OUT IN
Functional Block Diagram
PSense
N/C
9
10
GND
1
2
3
GND
8
7
Voltage
Detector
Input
Match
Output
Match
RF IN
RF OUT
GND
Bias
Control
GND
6
5
4
VCC
PC
2
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RMPA5255 Rev. E
Performance Data
802.11a OFDM Modulation
(176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
RMPA5255 EVM vs. Modulated Pout
RMPA5255 Gain vs. Modulated Pout
VCC=3.3V, VPC=2.9V, T=25°C
VCC=3.3V, VPC=2.9V, T=25°C
8
7
6
5
4
3
2
1
0
35
34
33
32
31
30
29
28
4.9 GHz
5.1 GHz
5.3 GHz
5.5 GHz
5.7 GHz
5.9 GHz
4.9 GHz
5.1 GHz
5.3 GHz
5.5 GHz
5.7 GHz
5.9 GHz
Note: Uncorrected EVM. Source EVM is approximately 0.8%.
5
10
15
20
25
5
10
15
20
25
30
Modulated Power Out (dBm)
Modulated Power Out (dBm)
RMPA5255 Total Current vs. Modulated Pout
RMPA5255 Detector Voltage vs. Modulated Pout
VCC=3.3V, VPC=2.9V, T=25°C
VCC=3.3V, VPC=2.9V, T=25°C
800
700
600
500
400
300
400
350
300
250
200
150
4.9 GHz
5.1 GHz
5.3 GHz
5.5 GHz
5.7 GHz
5.9 GHz
4.9 GHz
5.1 GHz
5.3 GHz
5.5 GHz
5.7 GHz
5.9 GHz
5
10
15
20
25
30
5
10
15
20
25
30
Modulated Power Out (dBm)
Modulated Power Out (dBm)
Performance Data
Single Tone
RMPA5255 Gain vs. Single Tone Pout
RMPA5255 S-Parameters vs. Frequency
VCC=3.3V, VPC=2.9V, T=25°C
VCC=3.3V, VPC=2.9V, T=25°C
36
34
32
30
28
26
35
30
25
20
15
10
5
0
S21 (dB)
-5
-10
-15
-20
-25
-30
-35
4.9 GHz
5.1 GHz
5.3 GHz
5.5 GHz
5.7 GHz
5.9 GHz
S11 (dB)
S22 (dB)
0
4.5
5
5.5
6
6.5
12
14
16
18
20
22
24
26
28
Single Tone Power Out (dBm)
Frequency (GHz)
3
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RMPA5255 Rev. E
Schematic
VDET
(P-Sense)
10
9
Pin
1
Description
GND
1
2
8
7
RF IN
GND
VPC
VCC
2
3
4
5
RF IN
RF OUT
50Ω
50Ω
3
6
6
GND
7
8
9
10
11
RF OUT
GND
VDET (P-Sense)
N/C
4
5
C1
220pF
CENTER GND
C2
0.01µF
C3
2.2µF
VPC
VCC
Package Outline
10
9
I/O 1 INDICATOR
1
8
NOTES:
1. PACKAGE BASE MATERIAL AND
INTERCONNECT METALLIZATION:
BT GRADE CCL-HL832, AuNiCu,
5.00 0.10mm
2
3
7
6
TOP VIEW
Au 0.38 MICROMETERS MINIMUM.
2. SMT EXPOSURE: THIS DEVICE WILL WITHSTAND EXPOSURE TO
TEMPERATURES OF 240°C MAXIMUM FOR DWELL TIME OF
10 SECONDS MAXIMUM.
4
5
5.00 0.10mm
= EXPOSED METAL CONTACT PADS
FRONT VIEW
1.40 0.10mm
1.80 TYP.
0.70 TYP.
0.10 TYP.
1.40 TYP.
0.60 TYP.
0.70 TYP.
1.70 TYP.
ZXYTT
5255
2
0.40 TYP.
2.80 SQ.
1
1.10 TYP.
BOTTOM VIEW
Dimensions in mm
4
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RMPA5255 Rev. E
Evaluation Board Bill of Materials
Evaluation Board Layout
Actual Board Size = 2.0" X 1.5"
Evaluation Board Turn-On Sequence1
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin on the board.
2) Connect voltmeter to VDET (P-Sense).
3) Apply positive supply voltage (3.3 V) to pin VCC (Collector voltage).
4) Apply positive bias voltage (2.9 V) to pin VPC (Power Control voltage).
5) At this point, you should expect to observe the following positive currents flowing into the pins:
Pin
Current
VCC
VPC
150 – 170 mA
21 – 31 mA
6) Apply input RF power to SMA connector pin RFIN. Current for pin VCC will vary depending on the input drive level.
7) Vary positive voltage VPC from +2.9 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow
into the pins:
Pin
Current
<1 nA
VCC
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note:
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
5
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RMPA5255 Rev. E
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Precautions to Avoid Permanent Device Damage:
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.
•
Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.
Reflow Profile
•
•
•
Ramp-up: During this stage the solvents are evaporated from
the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.
•
•
Device Cleaning: Standard board cleaning techniques should
not present device problems provided that the boards are
properly dried to remove solvents or water residues.
Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 60-180 seconds at 150-200°C.
Static Sensitivity: Follow ESD precautions to protect against
ESD damage:
– A properly grounded static-dissipative surface on which to
place devices.
Reflow Zone: If the temperature is too high, then devices may
be damaged by mechanical stress due to thermal mismatch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255–260°C,
with a maximum limit of 260°C.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each person
to wear while handling devices.
•
•
General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.
•
Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling promotes a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.
Device Usage:
Solder Joint Characteristics:
Fairchild recommends the following procedures prior to
assembly.
Proper operation of this device depends on a reliable void-free
attachment of the heat sink to the PWB. The solder joint should
be 95% void-free and be a consistent thickness.
•
•
Assemble the devices within 7 days of removal from the dry
pack.
Rework Considerations:
During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
Rework of a device attached to a board is limited to reflow of the
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.
•
If the 7-day period or the environmental conditions have been
exceeded, then the dry-bake procedure, at 125°C for 24 hours
minimum, must be performed.
Recommended Solder Reflow Profile
Peak temp
260 +0/-5 °C
10 - 20 sec
260
Ramp-Up R ate
3 °C/sec max
217
200
Time above
liquidus temp
60 - 150 sec
150
100
Preheat, 150 to 200 °C
60 - 180 sec
Ramp-Up R ate
3 °C/sec max
Ramp-Down Rate
6 °C/sec max
50
25
Time 25 °C/sec t o peak temp
6 minutes max
Time (Sec)
6
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RMPA5255 Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
7
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RMPA5255 Rev. E
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