RURP1560 [FAIRCHILD]

15A, 400V - 600V Ultrafast Diodes; 15A , 400V - 600V超快二极管
RURP1560
型号: RURP1560
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

15A, 400V - 600V Ultrafast Diodes
15A , 400V - 600V超快二极管

二极管
文件: 总4页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MUR1540, MUR1560, RURP1540, RURP1560  
Data Sheet  
January 2002  
15A, 400V - 600V Ultrafast Diodes  
Features  
The MUR1540, MUR1560, RURP1540, and RURP1560 are  
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns  
ultrafast diodes (t < 55ns) with soft recovery  
rr  
o
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175 C  
characteristics. They have a low forward voltage drop and  
are of planar, silicon nitride passivated, ion-implanted,  
epitaxial construction.  
• Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V  
• Avalanche Energy Rated  
These devices are intended for use as energy  
• Planar Construction  
steering/clamping diodes and rectifiers in a variety of  
switching power supplies and other power switching  
applications. Their low stored charge and ultrafast recovery  
with soft recovery characteristics minimizes ringing and  
electrical noise in many power switching circuits, thus  
reducing power loss in the switching transistor.  
Applications  
• Switching Power Supply  
• Power Switching Circuits  
• General Purpose  
Formerly developmental type TA09905.  
Packaging  
Ordering Information  
JEDEC TO-220AC  
PART NUMBER  
PACKAGE  
BRAND  
MUR1540  
ANODE  
CATHODE  
MUR1540  
TO-220AC  
CATHODE  
(FLANGE)  
RURP1540  
MUR1560  
TO-220AC  
TO-220AC  
TO-220AC  
RURP1540  
MUR1560  
RURP1560  
RURP1560  
NOTE: When ordering, use the entire part number  
Symbol  
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
MUR1540  
MUR1560  
RURP1540  
RURP1560  
UNITS  
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
400  
400  
400  
15  
600  
600  
600  
15  
V
V
V
A
RRM  
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
RWM  
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
F(AV)  
o
(T = 145 C)  
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Square Wave 20kHz)  
30  
30  
A
A
FRM  
FSM  
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Halfwave 1 Phase 60Hz)  
200  
200  
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
100  
20  
100  
20  
W
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
mJ  
AVL  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
, T  
-55 to 175  
-55 to 175  
C
STG  
J
©2002 Fairchild Semiconductor Corporation  
MUR1540, MUR1560, RURP1540, RURP1560 Rev. B  
MUR1540, MUR1560, RURP1540, RURP1560  
o
Electrical Specifications  
T
= 25 C, Unless Otherwise Specified  
C
MUR1540, RURP1540  
MUR1560, RURP1560  
SYMBOL  
TEST CONDITION  
= 15A  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
UNITS  
V
V
I
I
-
-
-
-
-
-
-
-
-
-
-
-
-
1.25  
1.12  
100  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5  
1.2  
-
F
F
o
= 15A, T = 150 C  
V
F
C
I
V
V
V
V
= 400V  
= 600V  
-
-
µA  
µA  
µA  
µA  
ns  
R
R
R
R
R
-
-
100  
-
o
= 400V, T = 150 C  
C
-
500  
-
-
o
= 600V, T = 150 C  
-
-
500  
55  
60  
-
C
t
I
I
I
I
= 1A, dI /dt = 100A/µs  
-
55  
60  
-
-
rr  
F
F
F
F
F
= 15A, dI /dt = 100A/µs  
-
-
ns  
F
t
t
= 15A, dI /dt = 100A/µs  
30  
17  
-
30  
20  
-
ns  
a
F
= 15A, dI /dt = 100A/µs  
-
-
ns  
b
F
o
R
1.5  
1.5  
C/W  
θJC  
DEFINITIONS  
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).  
F
I
= Instantaneous reverse current.  
R
t
= Reverse recovery time at dI /dt = 100A/µs (See Figure 6), summation of t + t .  
F a b  
rr  
t = Time to reach peak reverse current at dI /dt = 100A/µs (See Figure 6).  
a
F
t = Time from peak I  
RM  
to projected zero crossing of I  
based on a straight line from peak I  
through 25% of I  
(See Figure 6).  
RM  
b
RM  
RM  
R
= Thermal resistance junction to case.  
θJC  
pw = pulse width.  
D = duty cycle.  
Typical Performance Curves  
500  
100  
80  
o
175 C  
10  
1.0  
o
o
175 C  
10  
100 C  
o
0.1  
100 C  
o
25 C  
0.01  
0.001  
o
25 C  
1
0
100  
200  
300  
400  
500  
600  
0
0.5  
1.0  
V , FORWARD VOLTAGE (V)  
1.5  
2.0  
V , REVERSE VOLTAGE (V)  
F
R
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE  
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE  
©2002 Fairchild Semiconductor Corporation  
MUR1540, MUR1560, RURP1540, RURP1560 Rev. B  
MUR1540, MUR1560, RURP1540, RURP1560  
Typical Performance Curves (Continued)  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
DC  
t
SQ. WAVE  
rr  
t
a
6
4
t
b
2
0
120  
130  
140  
150  
160  
170  
180  
1
10  
20  
o
I , FORWARD CURRENT (A)  
T , CASE TEMPERATURE ( C)  
F
C
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT  
rr  
FIGURE 4. CURRENT DERATING CURVE  
a
b
Test Circuits and Waveforms  
V
AMPLITUDE AND  
GE  
R
CONTROL dI /dt  
F
G
L
t
t CONTROL I  
1 AND  
2 F  
DUT  
CURRENT  
SENSE  
dI  
F
t
rr  
R
I
F
G
dt  
t
t
b
+
a
0
V
V
DD  
GE  
-
IGBT  
t
1
0.25 I  
RM  
t
2
I
RM  
FIGURE 5. t TEST CIRCUIT  
rr  
FIGURE 6. t WAVEFORMS AND DEFINITIONS  
rr  
I = 1A  
L = 40mH  
R < 0.1Ω  
2
E
= 1/2LI [V  
/(V  
- V )]  
DD  
AVL  
= IGBT (BV  
R(AVL) R(AVL)  
V
AVL  
Q
> DUT V )  
R(AVL)  
1
CES  
L
R
+
V
CURRENT  
SENSE  
I
I
L
L
DD  
I
V
Q
1
V
DD  
DUT  
-
t
t
t
2
t
0
1
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT  
FIGURE 8. AVALANCHE CURRENT ANDVOLTAGE  
WAVEFORMS  
©2002 Fairchild Semiconductor Corporation  
MUR1540, MUR1560, RURP1540, RURP1560 Rev. B  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
â
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
FAST  
ACEx™  
Bottomless™  
CoolFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
FASTr™  
FRFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
CROSSVOLT™  
DenseTrench™  
DOME™  
POP™  
Power247™  
PowerTrenchâ  
QFET™  
EcoSPARK™  
E2CMOSTM  
TinyLogic™  
QS™  
EnSignaTM  
TruTranslation™  
UHC™  
QT Optoelectronics™  
Quiet Series™  
SILENTSWITCHERâ  
FACT™  
FACT Quiet Series™  
UltraFETâ  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. H4  

相关型号:

RURP1560-F085

600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器
ONSEMI

RURP1560-F085P

600 V、15 A、1.24 V、TO-220(2 引脚)超快速整流器
ONSEMI

RURP1560_04

15A, 400V - 600V Ultrafast Diode
FAIRCHILD

RURP1560_F085

600V, 15A, 1.24V, TO-220 (2-lead)Ultrafast Rectifier, TO-220, MOLDED, 2LD, 800/RAIL
FAIRCHILD

RURP1560_NL

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, LEAD FREE, TO-220AC, 2 PIN
FAIRCHILD

RURP1570

15A, 700V, SILICON, RECTIFIER DIODE
ROCHESTER

RURP3010

RECTIFIER DIODE,100V V(RRM),TO-220AC
RENESAS

RURP3010

30A, 100V, SILICON, RECTIFIER DIODE
ROCHESTER

RURP30100

30A, 1000V Ultrafast Diode
INTERSIL

RURP30120

30A, 1200V Ultrafast Diode
INTERSIL

RURP3015

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 150V V(RRM), Silicon
RENESAS

RURP3020

30A, 200V Ultrafast Diode
FAIRCHILD