S1K [FAIRCHILD]
General Purpose Rectifiers; 通用整流器型号: | S1K |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | General Purpose Rectifiers |
文件: | 总3页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S1A - S1M
Features
• Low profile package.
• Glass passivated junction.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
1A
1B 1D 1G
1J
1K
1M
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
50
100 200 400 600 800 1000
V
A
Average Rectified Forward Current,
@ TA = 100°C
1.0
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
40
A
-55 to +150
-55 to +150
C
°
Tstg
TJ
Operating Junction Temperature
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient*
1.4
85
W
RθJA
C/W
°
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Device
Units
1A
1B 1D 1G
1J
1K
1M
VF
trr
Forward Voltage @ 1.0 A
Reverse Recovery Time
1.1
V
1.8
µs
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IR
1.0
50
µA
µA
Reverse Current @ rated VR
TA = 25°C
TA = 125°C
CT
Total Capacitance
12
pF
VR = 4.0 V, f = 1.0 MHz
2001 Fairchild Semiconductor Corporation
S1A-S1M, Rev. C1. Aug 2006
General Purpose Rectifiers
(continued)
Typical Characteristics
2
100
10
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.315x0.315"
(8.0x8.0mm)
1
COPPER PAD AREAS
1
0.1
0.01
0
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
Lead Temperature [ºC]
Forward Voltage, VF [V]
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
30
100
10
25
8.3ms Single Half Sine-Wave
JEDEC Method
º
T
= 125 C
J
20
1
0.1
15
10
5
º
= 75 C
T
T
J
J
º
= 25 C
0.01
0.001
0
0
20
40
60
80
100 120 140
1
2
5
10
20
50
100
Reverse Voltage, VR[V]
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
100
50
100
Units Mounted On
20"x 20"(5.4mm2)+0.5mil
50
inches(0.013mm)
Thick Copper Land Areas
T
= 25 C
º
J
f = 1.0 MHz
Vsig = 50mV p-p
10
5
10
5
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage, VR [V]
Pulse Duration [s]
Figure 5. Total Capacitance
Figure 6. Thermal Impedance Characteristics
2001 Fairchild Semiconductor Corporation
S1A-S1M, Rev. C1. Aug 2006
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice to improve
design.
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Obsolete
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The datasheet is printed for reference information only.
Rev. I20
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