SB150TR [FAIRCHILD]

Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN;
SB150TR
型号: SB150TR
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN

瞄准线 二极管
文件: 总2页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Discr ete P OWER & Sign a l  
Tech n ologies  
SB120 - SB1100  
Features  
1.0 min (25.4)  
1.0 ampere operation at TA = 75°C  
with no thermal runaway.  
Dimensions in  
inches (mm)  
For use in low voltage, high  
frequency inverters free  
wheeling, and polarity  
0.205 (5.21)  
0.160 (4.06)  
DO-41  
COLOR BAND DENOTES CATHODE  
protection applications.  
0.107 (2.72)  
0.080 (2.03)  
0.034 (0.86)  
0.028 (0.71)  
1.0 Ampere Schottky Barrier Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
.375 " lead length @ TL = 75°C  
Peak Forward Surge Current  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
1.0  
A
if(surge)  
30  
A
PD  
1.25  
12.5  
80  
W
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
-65 to +125  
-65 to +125  
°C  
°C  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
120  
20  
130  
30  
140  
40  
150  
50  
160  
60  
180  
80  
1100  
100  
80  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
V
V
V
14  
21  
28  
35  
42  
56  
20  
30  
40  
50  
60  
80  
100  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Current  
0.5  
10  
mA  
mA  
@ rated VR  
TA = 25°C  
TA = 100°C  
Maximum Forward Voltage @ 1.0 A  
500  
700  
850  
mV  
mA  
Maximum Full Load Reverse Current,  
30  
Full Cycle  
TA = 75°C  
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
110  
pF  
1998 Fairchild Semiconductor Corporation  
Schottky Barrier Rectifiers  
(continued)  
Typical Characteristics  
Forward Current Derating Curve  
Forward Characteristics  
1
20  
10  
SB120  
0.75  
SB1100  
SINGLE PHASE  
HALF WAVE  
60Hz  
0.5  
SB150-SB160  
1
RESISTIVE OR  
INDUCTIVE LOAD  
.375" 9.5mm  
LEAD LENGTHS  
0.25  
º
= 25 C  
T
J
Pulse Width = 300µS  
1% Duty Cycle  
0
0.1  
0
20  
40  
60  
80  
100  
120  
140  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
FORWARD VOLTAGE (V)  
2
LEAD TEMPERATURE (ºC)  
Non-Repetitive Surge Current  
Junction Capacitance  
30  
24  
18  
12  
6
400  
200  
º
= 25 C  
T
J
100  
80  
60  
40  
20  
10  
0
1
2
4
6
8 10  
20  
40 60 100  
0.1  
0.5  
1
5
10  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
REVERSE VOLTAGE (V)  

相关型号:

SB151

High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
TSC

SB151

Bridge Rectifier Diode
SURGE

SB1510

15.0 AMP SILICON BRIDGE
SURGE

SB1510

High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
TSC

SB15100

15 Amp Schottky Barrier Rectifier 20 to 100 Volts
MCC

SB15100

Schottky barrier rectifier diodes
SEMIKRON

SB15100

Schottky Barrier Rectifiers Reverse Voltage 35 to 100V Forward Current 15A
LRC

SB15100

15A Plug-in Schottky diode 100V R-6 series
SUNMATE

SB15100F

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 100V CURRENT: 15.0A
GULFSEMI

SB15100L

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MDD

SB15100S

Schottky barrier rectifier diodes
SEMIKRON

SB15100TL

Schottky barrier rectifier diodes
SEMIKRON