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SFM9014

更新时间：2024-09-18 02:15:41
品牌：FAIRCHILD
描述：Advanced Power MOSFET

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SFM9014 概述

Advanced Power MOSFET 先进的功率MOSFET

SFM9014 数据手册

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SFM9014  
Advanced Power MOSFET  
FEATURES  
BVDSS = -60 V  
RDS(on) = 0.5 Ω  
ID = -1.8 A  
! Avalanche Rugged Technology  
! Rugged Gate Oxide Technology  
! Lower Input Capacitance  
! Improved Gate Charge  
! Extended Safe Operating Area  
! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V  
! Lower RDS(ON) : 0.362 Ω (Typ.)  
SOT-223  
2
1
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-60  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TA=25oC)  
Continuous Drain Current (TA=70oC)  
Drain Current-Pulsed  
-1.8  
-1.1  
-14  
ID  
A
1
IDM  
VGS  
EAS  
IAR  
A
V
O
2
Gate-to-Source Voltage  
±!"  
110  
-1.8  
0.28  
-5.5  
2.8  
O
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
1
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
o
*
Total Power Dissipation (TA=25 C)  
PD  
W/oC  
*
Linear Derating Factor  
Operating Junction and  
0.022  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
oC  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Junction-to-Ambient  
Typ.  
--  
Max.  
Units  
oC/W  
RθJA  
*
45  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
P-CHANNEL  
POWER MOSFET  
SFM9014  
Electrical Characteristics (TC=25oC unless otherwise specified)  
Symbol  
BVDSS  
Characteristic  
Min. Typ. Max. Units  
Test Condition  
V
GS=0V,ID=-250µA  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temp. Coeff.  
Gate Threshold Voltage  
V
V/oC  
V
-60  
-- -0.05 --  
-2.0 -- -4.0  
-- -100  
--  
--  
∆BV/∆TJ  
VGS(th)  
ID=-250µA  
See Fig 7  
V
V
V
DS=-5V,ID=-250µA  
GS=-20V  
GS=20V  
Gate-Source Leakage , Forward  
Gate-Source Leakage , Reverse  
--  
--  
--  
--  
IGSS  
nA  
--  
--  
100  
-10  
VDS=-60V  
DS=-48V,TC=125oC  
IDSS  
Drain-to-Source Leakage Current  
µA  
V
-- -100  
Static Drain-Source  
On-State Resistance  
Forward Transconductance  
Input Capacitance  
4
RDS(on)  
VGS=-10V,ID=-0.9A  
VDS=-30V,ID=-0.9A  
--  
--  
Ω
0.5  
O
4
gfs  
Ciss  
Coss  
Crss  
td(on)  
tr  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
1.43 --  
270 350  
S
O
VGS=0V,VDS=-25V,f =1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
135  
35  
30  
50  
50  
40  
11  
--  
90  
25  
10  
19  
21  
16  
9
pF  
See Fig 5  
VDD=-30V,ID=-6.7A,  
Ω
RG=24  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
4
See Fig 13  
5
O
O
Qg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain(“Miller”) Charge  
VDS=-48V,VGS=-10V,  
Qgs  
Qgd  
nC  
1.8  
4.2  
ID=-6.7A  
4
5
O
--  
See Fig 6 & Fig 12  
O
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Characteristic  
Continuous Source Current  
Pulsed-Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Min. Typ. Max. Units  
Test Condition  
--  
--  
--  
--  
--  
--  
-1.8  
-14  
-3.8  
--  
Integral reverse pn-diode  
in the MOSFET  
TJ=25oC,IS=-1.8A,VGS=0V  
TJ=25oC,IF=-6.7A  
A
1
ISM  
O
4
VSD  
trr  
V
--  
O
ns  
µC  
75  
4
Qrr  
-- 0.17 --  
diF/dt=100A/µs  
O
Notes ;  
1
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature  
O
L=40mH, IAS=-1.8A, VDD=-25V, RG=27Ω*, Starting TJ =25oC  
2
O
I
_ -6.7A, di/dt 200A/µs, V  
BVDSS , Starting TJ =25oC  
3
_
_
<
<
<
O
SD  
DD  
4
_
<
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%  
O
5
Essentially Independent of Operating Temperature  
O
P-CHANNEL  
POWER MOSFET  
SFM9014  
Fig 1. Output Characteristics  
Fig 2. Transfer Characteristics  
VGS  
Top :  
- 15 V  
- 10 V  
1
1
10  
10  
- 8.0 V  
- 7.0 V  
- 6.0 V  
- 5.5V  
- 5.0 V  
Bottom : - 4.5V  
150 oC  
0
0
10  
10  
@ Notes :  
1. VGS = 0 V  
25 oC  
2. VDS = -30 V  
@ Notes :  
1. 250 s Pulse Test  
µ
3. 250 s Pulse Test  
µ
- 55 oC  
2. T = 25 oC  
C
-1  
-1  
10  
10  
-1  
0
1
2
4
6
8
10  
10  
10  
10  
-VGS , Gate-Source Voltage [V]  
-VDS , Drain-Source Voltage [V]  
Fig 3. On-Resistance vs. Drain Current  
Fig 4. Source-Drain Diode Forward Voltage  
1.2  
0.9  
0.6  
0.3  
0.0  
1
10  
V
GS = -10 V  
0
10  
150 oC  
@ Notes :  
1. VGS = 0 V  
25 oC  
2. 250 s Pulse Test  
µ
V
GS = -20 V  
@ Note : T = 25 oC  
J
-1  
10  
0
5
10  
15  
20  
25  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-I , Drain Current [A]  
-VSD , Source-Drain Voltage [V]  
D
Fig 5. Capacitance vs. Drain-Source Voltage  
Fig 6. Gate Charge vs. Gate-Source Voltage  
500  
400  
300  
200  
100  
C
iss=C +Cgd (C =shorted)  
gs ds  
C
oss=C +C  
ds gd  
V
DS =-12 V  
DS =-30 V  
DS =-48 V  
10  
5
Crss=C  
V
gd  
V
Ciss  
Coss  
@Notes:  
1. VGS = 0 V  
2. f= 1MHz  
Crss  
@Notes: I =-6.7 A  
D
00  
10  
0
1
0
2
4
6
8
10  
10  
Q , Total Gate Charge [nC]  
-VDS , Drain-Source Voltage [V]  
G
P-CHANNEL  
POWER MOSFET  
SFM9014  
Fig 7. Breakdown Voltage vs. Temperature  
Fig 8. On-Resistance vs. Temperature  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
@ Notes :  
1. VGS = -10 V  
@ Notes :  
1. VGS = 0 V  
2. I = -3.4 A  
2. I = -250  
A
µ
D
D
-75 -50 -25  
0
25  
50  
75  
100 125 150 175  
o
-75 -50 -25  
0
25  
50  
75  
100 125 150 175  
o
T , Junction Temperature [C]  
T , Junction Temperature [C]  
J
J
Fig 9. Max. Safe Operating Area  
Fig 10. Max. Drain Current vs. Case Temperature  
2.0  
2
10  
Operation in This Area  
is Limited by R DS(on)  
1.5  
1.0  
0.5  
0.0  
1
10  
0.01 ms  
0.1 ms  
1 ms  
10 ms  
0
10  
DC  
@ Notes :  
1. T = 25 oC  
C
-1  
10  
2. T = 150 oC  
J
3. Single Pulse  
-2  
10  
0
1
2
25  
50  
75  
100  
125  
150  
10  
10  
10  
o
T , Case Temperature [C]  
-VDS , Drain-Source Voltage [V]  
c
Fig 11. Thermal Response  
102  
D=0.5  
@ Notes :  
1. Z JC(t)=45 oC/W Max.  
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*Zθ JC(t)  
θ
101  
0.2  
0.1  
P.DM  
0.05  
0.02  
t1.  
t2.  
0.01  
100  
single pulse  
10-5  
10-4  
t1  
10-3  
10-2  
10-1  
100  
101  
,
Square Wave Pulse Duration [sec]  
P-CHANNEL  
POWER MOSFET  
SFM9014  
Fig 12. Gate Charge Test Circuit & Waveform  
“ Current Regulator ”  
VGS  
Same Type  
as DUT  
Ω
50K  
Qg  
12V  
200nF  
-10V  
300nF  
VDS  
Qgs  
Qgd  
VGS  
DUT  
R2  
-3mA  
R1  
Charge  
Current Sampling (IG) Current Sampling (ID)  
Resistor Resistor  
Fig 13. Resistive Switching Test Circuit & Waveforms  
RL  
t on  
t off  
Vout  
Vin  
tf  
td(on)  
tr  
td(off)  
VDD  
( 0.5 rated VDS  
)
Vin  
10%  
RG  
DUT  
-10V  
90%  
Vout  
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms  
BVDSS  
1
2
2
LL  
ID  
----  
--------------------  
BVDSS -- VDD  
EAS  
=
LL IAS  
VDS  
t p  
Time  
Vary tp to obtain  
required peak ID  
VDD  
VDS (t)  
RG  
C
VDD  
ID (t)  
DUT  
-10V  
IAS  
BVDSS  
t p  
P-CHANNEL  
POWER MOSFET  
SFM9014  
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms  
+
VDS  
DUT  
--  
I S  
L
Driver  
VGS  
Compliment of DUT  
RG  
(N-Channel)  
VDD  
VGS  
• dv/dt controlled by “RG”  
• IS controlled by Duty Factor “D”  
Gate Pulse Width  
VGS  
--------------------------  
D =  
Gate Pulse Period  
10V  
( Driver )  
Body Diode Reverse Current  
IRM  
I S  
( DUT )  
di/dt  
IFM , Body Diode Forward Current  
Vf  
VDS  
( DUT )  
Body Diode  
VDD  
Forward Voltage Drop  
Body Diode Recovery dv/dt  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
PACMAN™  
POP™  
Power247™  
PowerTrench  
QFET™  
QS™  
SPM™  
Stealth™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
ImpliedDisconnect™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FACT™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOSTM  
EnSignaTM  
FACT Quiet Series™  
â
FAST  
â
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
I2C™  
QT Optoelectronics™ TinyLogic™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
TruTranslation™  
UHC™  
UltraFET  
MSXPro™  
OCX™  
â
OCXPro™  
OPTOLOGIC  
Across the board. Around the world.™  
The Power Franchise™  
ProgrammableActive Droop™  
â
â
SILENT SWITCHER VCX™  
SMARTSTART™  
OPTOPLANAR™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I1  

SFM9014 替代型号

型号 制造商 描述 替代类型 文档
SFM9014TF FAIRCHILD Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta 功能相似

SFM9014 相关器件

型号 制造商 描述 价格 文档
SFM9014TF FAIRCHILD Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 获取价格
SFM9110 FAIRCHILD Advanced Power MOSFET 获取价格
SFM9110D84Z FAIRCHILD Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 获取价格
SFM9110L99Z FAIRCHILD Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 获取价格
SFM9210 FAIRCHILD Advanced Power MOSFET 获取价格
SFM9210TF FAIRCHILD Power Field-Effect Transistor, 0.5A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 获取价格
SFM9214 FAIRCHILD Advanced Power MOSFET 获取价格
SFM9214TF FAIRCHILD Power Field-Effect Transistor, 0.45A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 获取价格
SFM9214TF ROCHESTER 0.45A, 250V, 4ohm, P-CHANNEL, Si, POWER, MOSFET 获取价格
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