SGH40N60UF [FAIRCHILD]

Ultra-Fast IGBT; 超快速IGBT

SGH40N60UF


型号：	SGH40N60UF
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Ultra-Fast IGBT 超快速IGBT 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
文件：	总7页 (文件大小：550K)
下载：	下载PDF数据表文档文件

SGH40N60UFD

Ultra-Fast IGBT

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677 FAIRCHILD

SGH40N60UFDTU

Ultra-Fast IGBT

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33 FAIRCHILD

SGH40N60UFTU

SGH40N60UF 600 V PT IGBT

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30 FAIRCHILD

SGH5002F01

RF Small Signal Field-Effect Transistor, N-Channel

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0 SONY

SGH5002F-01-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5002F-02-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5002F03

RF Small Signal Field-Effect Transistor, N-Channel

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0 SONY

SGH5002F-03-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5002F04

RF Small Signal Field-Effect Transistor, N-Channel

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0 SONY

SGH5002F05

RF Small Signal Field-Effect Transistor, N-Channel

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0 SONY

SGH5002F-05-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5002F-05-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5003F-01-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5003F-02-T6

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, M-253, 4 PIN

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0 SONY

SGH5003F03

RF Small Signal Field-Effect Transistor, N-Channel

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0 SONY

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