SGH5N120RUFTU_技术文档

IGBT

SGH5N120RUF

Short Circuit Rated IGBT

General Description

Features

Fairchild's RUF series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses as

well as short circuit ruggedness. The RUF series is

designed for applications such as motor control,

uninterrupted power supplies (UPS) and general inverters

where short circuit ruggedness is a required feature.

•

Short circuit rated 10µs @ T = 100°C, V = 15V

C

GE

High speed switching

Low saturation voltage : V

High input impedance

= 2.3 V @ I = 5A

CE(sat)

C

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

E

G

TO-3P

G

C

E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

Symbol

Description

SGH5N120RUF

Units

V

Collector-Emitter Voltage

1200

CES

GES

Gate-Emitter Voltage

± 25

V

Collector Current

@ T

=

25°C

8

A

C

I

C

Collector Current

@ T = 100°C

5

A

C

Pulsed Collector Current

15

10

A

CM (1)

T

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

@ T = 100°C

µs

W

°C

SC

C

P

@ T

=

25°C

74

D

C

@ T = 100°C

30

C

T

-55 to +150

J

T

stg

T

300

°C

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

--

Max.

Units

°C/W

R

Thermal Resistance, Junction-to-Case

1.68

40

θJC

θJA

Thermal Resistance, Junction-to-Ambient

--

SGH5N120RUF Rev. B2

Electrical Characteristics of the IGBT

T = 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BV

Collector-Emitter Breakdown Voltage

Temperature Coefficient of Breakdown

Voltage

V

= 0V, I = 1mA

1200

--

V

CES

GE

C

∆B

/

VCES

J

= 0V, I = 1mA

0.6

V/°C

GE

C

∆T

I

Collector Cut-Off Current

G-E Leakage Current

V

= V

, V = 0V

--

1

mA

nA

CES

GES

CE

CES

GE

, V = 0V

± 100

GE

GES

CE

On Characteristics

V

G-E Threshold Voltage

I

= 5mA, V = V

GE

3.5

--

5.5

2.3

2.8

7.5

3.0

--

V

GE(th)

C

CE

= 5A,

= 8A,

V

= 15V

Collector to Emitter

Saturation Voltage

GE

V

CE(sat)

--

Dynamic Characteristics

C

Input Capacitance

--

520

45

--

pF

ies

V

= 30V V = 0V,

, GE

CE

Output Capacitance

oes

res

f = 1MHz

Reverse Transfer Capacitance

16

Switching Characteristics

t

Turn-On Delay Time

--

20

60

--

ns

d(on)

Rise Time

r

Turn-Off Delay Time

Fall Time

50

90

300

--

ns

V

R

= 600 V, I = 5A,

C

d(off)

f

CC

= 30Ω, V = 15V,

150

0.35

0.33

0.68

20

ns

G

GE

Inductive Load, T = 25°C

E

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

mJ

ns

C

on

off

--

0.95

--

ts

t

d(on)

r

70

--

ns

Turn-Off Delay Time

Fall Time

70

130

400

--

ns

V

= 600 V, I = 5A,

C

d(off)

f

CC

R

= 30Ω, V = 15V,

200

0.38

0.50

0.88

ns

G

GE

Inductive Load, T = 125°C

E

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

mJ

C

on

off

ts

--

1.28

V

= 600 V, V = 15V

GE

C

CC

T

Short Circuit Withstand Time

10

--

µs

sc

@ T = 100°C

Q

Total Gate Charge

--

28

3

42

5

nC

nH

g

V

= 600 V, I = 5A,

= 15V

CE

GE

C

Q

Gate-Emitter Charge

Gate-Collector Charge

Internal Emitter Inductance

ge

gc

13

14

18

--

L

Measured 5mm from PKG

e

SGH5N120RUF Rev. B2

25

20

15

10

5

40

30

20

10

0

Common Emitter

V_GE= 15V

20V

17V

Common Emitter

T_C= 25℃

℃

T_C

= 25

15V

T_C= 125

12V

V_GE= 10V

0

2

4

6

8

10

0

2

4

6

8

10

Collector - Emitter Voltage, V_CE[V]

Fig 1. Typical Output Characteristics

Fig 2. Typical Saturation Voltage Characteristics

12

3.2

Common Emitter

V_CC= 600V

V_GE= 15V

3.0

Load Current : peak of square wave

8A

2.8

2.6

2.4

2.2

2.0

1.8

8

I_C= 5A

4

Duty cycle : 50%

T_C= 100℃

Power Dissipation = 15W

0

25

50

75

100

125

150

0.1

1

10

100

1000

℃

Frequency [KHz]

Case Temperature, T_C

[

]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequency

Temperature at Variant Current Level

20

16

12

8

Common Emitter

T_C= 125℃

℃

T_C= 25

16

12

8

10A

12

4

5A

I_C= 3A

8

I_C= 3A

0

4

16

20

0

4

8

12

16

20

Gate - Emitter Voltage, V_GE[V]

Fig 5. Saturation Voltage vs. V

Fig 6. Saturation Voltage vs. V

GE

SGH5N120RUF Rev. B2

1000

800

600

400

200

0

Common Emitter

±

15V

V_GE= 0V, f = 1MHz

V_CC= 600V, V_GE

I_C=5A

=

℃

T_C= 25

℃

= 25

T_C

tr

℃

T_C= 125

td(on)

Cies

10

Coes

Cres

10

100

1

10

Collector - Emitter Voltage, V_CE[V]

Gate Resistance, R_G[Ω]

Fig 7. Capacitance Characteristics

Fig 8. Turn-On Characteristics vs.

Gate Resistance

1000

Common Emitter

V_CC= 600V, V_GE= ± 15V

I_C= 5A

Common Emitter

V_CC= 600V, V_GE= ± 15V

T_C

= 25℃

T_C

= 25℃

T_C= 125℃

1000

T_C= 125℃

tf

Eoff

td(off)

100

Eon

Eoff

10

100

10

100

10

100

Gate Resistance, R_G[Ω]

Fig 10. Switching Loss vs. Gate Resistance

Fig 9. Turn-Off Characteristics vs.

Gate Resistance

1000

Common Emitter

V_GE= ± 15V, R_G= 30Ω

V_GE= ± 15V, R = 30Ω

G

T_C

= 25℃

T_C

= 25℃

T_C= 125℃

100

tr

tf

100

td(on)

td(off)

10

2

4

6

8

10

2

4

6

8

10

Collector Current, I_C[A]

Fig 11. Turn-On Characteristics vs.

Collector Current

Fig 12. Turn-Off Characteristics vs.

Collector Current

SGH5N120RUF Rev. B2

16

14

12

10

8

Common Emitter

R_L= 120Ω

T_C= 25℃

±

25

V_GE

T_C

=

15V, R = 30Ω

℃

G

=

T_C= 125

1000

600V

400V

V_CC= 200V

6

Eoff

Eon

4

Eoff

Eon

2

100

0

2

4

6

8

10

0

10

20

30

Collector Current, I_C[A]

Gate Charge, Q_g[nC]

Fig 14. Gate Charge Characteristics

Fig 13. Switching Loss vs. Collector Current

100

I_CMAX. (Pulsed)

50µs

10

I_CMAX. (Continuous)

100µs

1ms

DC Operation

1

0.1

Single Nonrepetitive

Pulse T_C= 25℃

Curves must be derated

linearly with increase

in temperature

Safe Operating Area

V_GE= 20V, T_C= 100℃

0.01

1

0.1

1

10

100

1000

1

10

100

1000

Collector - Emitter Voltage, V_CE[V]

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA

10

0.5

1

0.1

0.2

0.1

0.05

0.02

0.01

Pdm

0.01

1E-3

t1

t2

single pulse

Duty factor D = t1 / t2

Peak Tj = Pdm

×

Zthjc + T_C

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

SGH5N120RUF Rev. B2

Package Dimension

TO-3P (FS PKG CODE AF)

15.60 ±0.20

13.60 ±0.20

9.60 ±0.20

4.80 ±0.20

+0.15

ø3.20 ±0.10

1.50

–0.05

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

1.40 ±0.20

+0.15

–0.05

0.60

5.45TYP

[5.45 ±0.30]

Dimensions in Millimeters

SGH5N120RUF Rev. B2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™ PACMAN™

GTO™

HiSeC™

I²C™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

SLIENT SWITCHER^®UHC™

SMART START™

SMP™

STAR*POWER™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

UltraFET^®

VCX™

POP™

Power247™

PowerTrench^®

QFET™

QS™

QT Optoelectronics™ TinyLogic™

Quiet Series™ TruTranslation™

FACT Quiet Series™ MicroPak™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H5


型号：	SGH5N120RUFTU
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN 晶体晶体管开关电动机控制瞄准线双极性晶体管栅局域网
文件：	总7页 (文件大小：466K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SGH5N120RUFTU [FAIRCHILD]

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