SGL25N120RUFTU [FAIRCHILD]
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN;
| 型号： | SGL25N120RUFTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN 栅 |
| 文件： | 总9页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
SGL25N120RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
Short circuit rated 10µs @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.3 V @ I = 25A
CE(sat)
C
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-264
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGL25N120RUF
Units
V
V
V
Collector-Emitter Voltage
1200
CES
GES
Gate-Emitter Voltage
± 25
V
Collector Current
@ T
=
25°C
40
25
A
C
I
I
C
Collector Current
@ T = 100°C
A
C
Pulsed Collector Current
75
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T = 100°C
10
µs
W
W
°C
°C
SC
C
P
@ T
=
25°C
270
D
C
@ T = 100°C
108
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
0.46
25
θJC
θJA
Thermal Resistance, Junction-to-Ambient
--
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 1mA
1200
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
1
mA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 25mA, V = V
GE
3.5
--
5.5
2.3
2.8
7.5
3.0
--
V
V
V
GE(th)
C
C
C
CE
= 25A,
= 40A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
2400
220
70
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
CE , GE
Output Capacitance
f = 1MHz
oes
res
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
60
--
--
ns
ns
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
70
130
300
--
ns
V
R
= 600 V, I = 25A,
C
d(off)
f
CC
= 10Ω, V = 15V,
150
1.60
1.63
3.23
30
ns
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
C
on
off
--
4.55
--
ts
t
t
t
t
d(on)
r
70
--
ns
Turn-Off Delay Time
Fall Time
90
165
400
--
ns
V
= 600 V, I = 25A,
C
d(off)
f
CC
R
= 10Ω, V = 15V,
200
1.88
2.50
4.35
ns
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
C
on
off
ts
--
6.31
V
= 600 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
µs
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
110
18
165
27
83
--
nC
nC
nC
nH
g
V
V
= 600 V, I = 25A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
55
L
Measured 5mm from PKG
18
e
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
175
150
125
100
75
125
100
75
50
25
0
17V
20V
℃
TC = 25
Common Emitter
VGE = 15V
15V
℃
℃
TC
= 25
TC = 125
12V
VGE = 10V
50
25
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.4
50
VCC= 600V
Common Emitter
Load Current : peak of square wave
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
VGE = 15V
40A
40
30
20
IC = 25A
10
Duty cycle : 50%
TC = 100℃
power Dissipation = 55W
0
0.1
1
10
100
1000
25
50
75
100
125
150
Frequency [KHz]
℃
Case Temperature, TC
[
]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
TC = 125℃
Common Emitter
TC = 25℃
16
12
8
50A
12
50A
25A
4
4
25A
IC = 13A
IC = 13A
0
0
0
4
8
12
16
20
0
4
8
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
4000
3500
3000
2500
2000
1500
1000
500
Common Emitter
Common Emitter
V
GE =0V, f = 1MHz
±
15V
V
CC = 600V, VGE
=
℃
TC = 25
IC = 25A
℃
℃
TC
= 25
Cies
TC = 125
tr
100
td(on)
Coes
Cres
10
0
10
100
1
10
Gate Resistance, RG [Ω]
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 25A
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 25A
TC
= 25℃
TC
= 25℃
td(off)
TC = 125℃
TC = 125℃
Eon
Eoff
tf
tf
Eoff
100
1000
10
100
10
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100
Common Emitter
Common Emitter
VGE = ± 15V, RG = 10Ω
±
25
Ω
VGE
TC
=
15V, RG = 10
℃
℃
=
TC
= 25℃
TC = 125
TC = 125℃
tf
100
tr
td(on)
td(off)
10
10
20
30
40
50
10
20
30
Collector Current, IC [A]
40
50
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
16
14
12
10
8
Common Emitter
RL = 24Ω
TC = 25
℃
Common Emitter
±
25
Ω
VGE
TC
=
15V, R = 10
℃
℃
G
=
Eoff
Eon
Eoff
TC = 125
600V
400V
Eon
VCC = 200V
6
4
2
1000
0
0
20
40
60
80
100
120
15
25
35
Collector Current, IC [A]
45
55
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
100
100
50µs
IC MAX. (Pulsed)
100µs
IC MAX. (Continuous)
1ms
10
DC Operation
1
10
Single Nonrepetitive
Pulse TC = 25℃
0.1
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 20V, TC = 100℃
0.01
1
0.1
1
10
100
1000
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
100
×
Zthjc + TC
101
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
Package Dimension
TO-264 (FS PKG CODE AR)
20.00 ±0.20
(8.30) (8.30)
(2.00)
(1.00)
(0.50)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGL25N120RUF Rev. B
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER® UHC™
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STAR*POWER™
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SuperSOT™-6
SuperSOT™-8
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Bottomless™
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DOME™
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EnSigna™
FACT™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
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FFairchild's RUF series of Insulated Gate
Bipolar Transistors (IGBTs) provides low
conduction and switching losses as well as
short circuit ruggedness. The RUF series is
designed for applications such as motor
control, uninterrupted power supplies (UPS)
and general inverters where short circuit
ruggedness is a required feature.
Quality and reliability
This pagePrint version
Design tools
technical information
buy products
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Features
technical support
my Fairchild
company
●
Short Circuit Rated 10µs @ T =
C
100°C, V = 15V
GE
●
●
High Speed Switching
Low Saturation Voltage : V
= 2.3
CE(sat)
V @ I = 25A
C
●
High Input Impedance
back to top
Applications
AC &DC motor controls, general
purpose inverters, robotics, and servo
controls.
back to top
Product Folder - Fairchild P/N SGL25N120RUF - Discrete, Short Circuit Rated IGBT
Product status/pricing/packaging
Inventory check
& ordering
Packing
method
Product
Product status Pricing*
Package type Leads
TO-264
SGL25N120RUFTU Full Production
$7.58
Purchase
3
RAIL
* Fairchild 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
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