SGP23N60UFTU [FAIRCHILD]
Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A; 低饱和电压： VCE （SAT） = 2.1 V @ IC = 12一
| 型号： | SGP23N60UFTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A |
| 文件： | 总7页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
SGP23N60UF
600V PT IGBT
General Description
Features
Fairchild®’s UF series IGBTs provide low conduction and
switching losses. UF series is designed for the applications
such as general inverters and PFC where High Speed
Switching is required feature.
•
•
•
•
12 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A
Typical Fall Time. . . . . . . . . .220ns at TJ = 125°C
High Input Impedance
C
G
TO-220
E
G C E
Applications
General Inverter, PFC
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
1
www.fairchildsemi.com
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
SGP23N60UF
Unit
V
600
Gate-Emitter Voltage
20
V
Collector Current
@ TC
@ TC = 100C
=
25C
23
A
IC
ICM (1)
PD
Collector Current
12
92
A
Pulsed Collector Current
A
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC
@ TC = 100C
=
25C
100
W
W
C
C
40
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Typ.
--
Max.
Unit
C/W
C/W
Thermal Resistance, Junction-to-Case
1.2
Thermal Resistance, Junction-to-Ambient
--
62.5
Electrical Characteristics of the IGBT
T = 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
600
--
--
--
--
V
/
0.6
V/C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
IC = 12mA, VCE = VGE
IC = 12A, VGE = 15V
IC = 23A, VGE = 15V
3.5
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Collector to Emitter
Saturation Voltage
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
720
100
25
--
--
--
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17
27
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Rise Time
Turn-Off Delay Time
Fall Time
60
130
150
--
VCC = 300 V, IC = 12A,
RG = 23, VGE = 15V,
Inductive Load, TC = 25C
70
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
115
135
250
23
--
400
--
32
--
Turn-Off Delay Time
Fall Time
100
220
205
320
525
200
250
--
V
R
CC = 300 V, IC = 12A,
G = 23, VGE = 15V,
Inductive Load, TC = 125C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
800
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
2
www.fairchildsemi.com
100
80
60
40
20
0
50
40
30
20
10
0
Common Emitter
VGE = 15V
Common Emitter
TC = 25℃
20V
TC
= 25℃
15V
12V
TC = 125℃
VGE = 10V
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
20
VCC = 300V
Common Emitter
Load Current : peak of square wave
V
GE = 15V
3
2
1
0
15
10
5
24A
12A
IC = 6A
Duty cycle : 50%
TC = 100℃
Power Dissipation = 21W
0
0
30
60
90
120
150
0.1
1
10
100
1000
Case Temperature, TC [℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 125℃
Common Emitter
T
C = 25℃
16
12
8
24A
24A
4
4
12A
8
12A
8
IC = 6A
IC = 6A
0
0
0
4
12
16
20
0
4
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
3
www.fairchildsemi.com
1200
1000
800
600
400
200
0
200
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
Ton
Tr
TC
= 25℃
Cies
TC = 125℃
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
30
1
10
100
200
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
1000
Common Emitter
V
CC = 300V, VGE = ± 15V
C = 12A
TC 25℃
C = 125℃
I
=
Eoff
Eon
T
Toff
Eon
Eoff
Tf
Toff
100
Common Emitter
CC = 300V, VGE = ± 15V
C = 12A
TC 25℃
C = 125℃
100
50
V
I
Tf
=
T
30
1
10
100
200
1
10
Gate Resistance, RG []
100
200
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23
Common Emitter
V
CC = 300V, VGE = ± 15V
G = 23
TC 25℃
C = 125℃
R
100
TC
= 25℃
=
TC = 125℃
T
Toff
Tf
Ton
Toff
100
50
Tr
Tf
10
4
8
12
16
20
24
4
8
12
16
20
24
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
4
www.fairchildsemi.com
15
12
9
1000
100
10
Common Emitter
RL = 25
TC = 25℃
Eoff
Eon
300 V
6
200 V
VCC = 100 V
Common Emitter
CC = 300V, VGE = ± 15V
G = 23
TC 25℃
Eon
Eoff
V
R
3
=
T
C = 125℃
0
4
8
12
16
20
24
0
10
20
30
40
50
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300
200
100
IC MAX. (Pulsed)
100
50us
100us
IC MAX. (Continuous)
10
10
1
1㎳
DC Operation
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 20V, TC = 100℃
0.1
0.1
0.3
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
5
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
5
www.fairchildsemi.com
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
6
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Rev. I64
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C0
7
www.fairchildsemi.com
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