SGP5N60RUFJ69Z [FAIRCHILD]
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN;
| 型号： | SGP5N60RUFJ69Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN 局域网 电动机控制 栅 瞄准线 晶体管 |
| 文件： | 总6页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2000
IGBT
SGP5N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
•
•
•
•
Short Circuit Rated 10us @ T = 100°C, V = 15V
C
GE
High Speed Switching
Low Saturation Voltage : V
High Input Impedance
= 2.2 V @ I = 5A
CE(sat)
C
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
E
G
TO-220
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGP5N60RUF
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
8
A
C
I
I
C
Collector Current
@ T = 100°C
5
A
C
Pulsed Collector Current
15
10
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
us
W
W
°C
°C
SC
C
P
@ T
=
25°C
60
D
C
@ T = 100°C
25
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.0
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
--
--
θJC
θJA
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor International
SGP5N60RUF Rev. A
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 5mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
C
C
C
CE
= 5A,
= 8A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
354
67
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
14
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
13
24
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
34
50
200
--
V
R
= 300 V, I = 5A,
C
d(off)
f
CC
= 40Ω, V = 15V,
136
88
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
107
195
13
--
280
--
ts
t
t
t
t
d(on)
r
26
--
Turn-Off Delay Time
Fall Time
40
60
350
--
V
= 300 V, I = 5A,
C
d(off)
f
CC
R
= 40Ω, V = 15V,
250
103
220
323
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
C
on
off
ts
--
--
V
= 300 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
us
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
16
3
24
6
nC
nC
nC
nH
g
V
V
= 300 V, I = 5A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
7
14
--
L
Measured 5mm from PKG
7.5
e
©2000 Fairchild Semiconductor International
SGP5N60RUF Rev. A
25
20
15
10
5
20
16
12
8
20V
Common Emitter
TC = 25℃
15V
Common Emitter
GE = 15V
℃ ━━
V
TC
= 25
℃
T
C = 125 ------
12V
VGE = 10V
4
0
0
1
10
0
2
4
6
8
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
Fig 1. Typical Output Characteristics
4.0
10
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
3.5
8
10A
3.0
2.5
2.0
1.5
1.0
6
4
5A
IC = 3A
2
Duty cycle : 50%
℃
TC = 100
Power Dissipation = 12W
0
0.1
1
10
100
1000
-50
0
50
100
150
℃
[
Case Temperature, TC
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
TC = 25
℃
T
C = 125
16
12
8
10A
10A
12
4
4
5A
5A
IC = 3A
IC = 3A
8
0
0
0
4
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
Fig 5. Saturation Voltage vs. V
GE
GE
©2000 Fairchild Semiconductor International
SGP5N60RUF Rev. A
700
600
500
400
300
200
100
0
Common Emitter
VGE = 0V, f = 1MHz
℃
TC = 25
Cies
Coes
Cres
1
10
Collector - Emitter Voltage, VCE [V]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
1000
Common Emitter
±
15V
VCC = 300V, VGE
C = 5A
=
I
℃ ━━
= 25
TC
℃
TC = 125 ------
Eoff
Eon
Toff
Eoff
100
Tf
Toff
Common Emitter
Tf
VCC = 300V, VGE = ± 15V
IC = 5A
℃ ━━
= 25
TC
100
℃
TC = 125 ------
10
10
100
Gate Resistance, RG [Ω]
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
Common Emitter
±
25
VGE = ± 15V, RG = 40Ω
VGE
TC
=
15V, RG = 40Ω
℃ ━━
℃
℃ ━━
= 25
TC
=
1000
℃
TC = 125 ------
TC = 125 ------
100
Ton
Tr
Toff
Tf
Toff
Tf
100
10
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
SGP5N60RUF Rev. A
1000
15
12
9
Common Emitter
VGE = ± 15V, RG = 40Ω
Common Emitter
RL = 60Ω
TC
= 25℃ ━━
℃
TC = 25
TC = 125℃ ------
300V
200V
VCC = 100V
Eoff
100
Eon
6
3
0
0
3
6
9
12
15
18
3
4
5
6
7
8
9
10
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
50
40
10
Ic MAX. (Pulsed)
50us
10
100us
Ic MAX. (Continuous)
㎳
1
DC Operation
1
Single Nonrepetitive
0.1
0.01
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
10 100
Collector-Emitter Voltage, VCE [V]
1
1
1000
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristic
10
0.5
1
0.2
0.1
0.05
0.1
Pdm
0.02
0.01
t1
t2
Duty factor D = t1 / t2
single pulse
10-4
Peak Tj = Pdm
×
Zthjc + TC
0.01
10-5
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2000 Fairchild Semiconductor International
SGP5N60RUF Rev. A
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. F1
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