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SGR5N60RUFTF [FAIRCHILD]

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3;
SGR5N60RUFTF
型号： SGR5N60RUFTF
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3

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IGBT  
SGR5N60RUF  
Short Circuit Rated IGBT  
General Description  
Features  
Fairchild's RUF series of Insulated Gate Bipolar Transistors  
(IGBTs) provide low conduction and switching losses as  
well as short circuit ruggedness. The RUF series is  
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.2 V @ I = 5A  
CE(sat)  
C
designed for  
applications such as motor control,  
uninterrupted power supplies (UPS) and general inverters  
where short circuit ruggedness is a required feature.  
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
C
G
D-PAK  
E
G
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGR5N60RUF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
8
A
C
I
I
C
Collector Current  
@ T = 100°C  
5
A
C
Pulsed Collector Current  
15  
10  
A
CM (1)  
T
Short Circuit Withstand Time  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T = 100°C  
us  
W
W
°C  
°C  
SC  
C
P
@ T  
=
25°C  
60  
D
C
@ T = 100°C  
25  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
2.0  
50  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient (PCB Mount)  
--  
(2)  
Notes :  
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
Electrical Characteristics of the IGBT  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BV  
Collector-Emitter Breakdown Voltage  
Temperature Coefficient of Breakdown  
Voltage  
V
V
= 0V, I = 250uA  
600  
--  
--  
--  
--  
V
CES  
GE  
C
∆B  
/
VCES  
J
= 0V, I = 1mA  
0.6  
V/°C  
GE  
C
∆T  
I
I
Collector Cut-Off Current  
G-E Leakage Current  
V
V
= V  
= V  
, V = 0V  
--  
--  
--  
--  
250  
uA  
nA  
CES  
GES  
CE  
CES  
GE  
, V = 0V  
± 100  
GE  
GES  
CE  
On Characteristics  
V
G-E Threshold Voltage  
I
I
I
= 5mA, V = V  
GE  
5.0  
--  
6.0  
2.2  
2.5  
8.5  
2.8  
--  
V
V
V
GE(th)  
C
C
C
CE  
= 5A,  
= 8A,  
V
V
= 15V  
= 15V  
Collector to Emitter  
Saturation Voltage  
GE  
GE  
V
CE(sat)  
--  
Dynamic Characteristics  
C
C
C
Input Capacitance  
--  
--  
--  
354  
67  
--  
--  
--  
pF  
pF  
pF  
ies  
V
= 30V V = 0V,  
, GE  
CE  
Output Capacitance  
oes  
res  
f = 1MHz  
Reverse Transfer Capacitance  
14  
Switching Characteristics  
t
t
t
t
Turn-On Delay Time  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
13  
24  
--  
--  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
d(on)  
Rise Time  
r
Turn-Off Delay Time  
Fall Time  
34  
50  
200  
--  
V
R
= 300 V, I = 5A,  
C
d(off)  
f
CC  
= 40Ω, V = 15V,  
136  
88  
G
GE  
Inductive Load, T = 25°C  
E
E
E
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
C
on  
off  
107  
195  
13  
--  
280  
--  
ts  
t
t
t
t
d(on)  
r
26  
--  
Turn-Off Delay Time  
Fall Time  
40  
60  
350  
--  
V
= 300 V, I = 5A,  
C
d(off)  
f
CC  
R
= 40Ω, V = 15V,  
250  
103  
220  
323  
G
GE  
Inductive Load, T = 125°C  
E
E
E
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
C
on  
off  
ts  
--  
--  
V
= 300 V, V = 15V  
GE  
C
CC  
T
Short Circuit Withstand Time  
10  
--  
--  
us  
sc  
@ T = 100°C  
Q
Total Gate Charge  
--  
--  
--  
--  
16  
3
24  
6
nC  
nC  
nC  
nH  
g
V
V
= 300 V, I = 5A,  
= 15V  
CE  
GE  
C
Q
Q
Gate-Emitter Charge  
Gate-Collector Charge  
Internal Emitter Inductance  
ge  
gc  
7
14  
--  
L
Measured 5mm from PKG  
7.5  
e
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
25  
20  
15  
10  
5
20  
16  
12  
8
20V  
Common Emitter  
TC = 25℃  
15V  
Common Emitter  
GE = 15V  
℃ ━━  
V
TC  
= 25  
℃
T
C = 125 ------  
12V  
VGE = 10V  
4
0
0
1
10  
0
2
4
6
8
Collector - Emitter Voltage, VCE [V]  
Collector - Emitter Voltage, VCE [V]  
Fig 2. Typical Saturation Voltage Characteristics  
Fig 1. Typical Output Characteristics  
4.0  
10  
VCC = 300V  
Load Current : peak of square wave  
Common Emitter  
VGE = 15V  
3.5  
8
10A  
3.0  
2.5  
2.0  
1.5  
1.0  
6
4
5A  
IC = 3A  
2
Duty cycle : 50%  
℃
TC = 100  
Power Dissipation = 12W  
0
0.1  
1
10  
100  
1000  
-50  
0
50  
100  
150  
℃
[
Case Temperature, TC  
]
Frequency [KHz]  
Fig 3. Saturation Voltage vs. Case  
Fig 4. Load Current vs. Frequency  
Temperature at Variant Current Level  
20  
16  
12  
8
20  
Common Emitter  
Common Emitter  
℃
TC = 25  
℃
T
C = 125  
16  
12  
8
10A  
10A  
12  
4
4
5A  
5A  
IC = 3A  
IC = 3A  
8
0
0
0
4
16  
20  
0
4
8
12  
16  
20  
Gate - Emitter Voltage, VGE [V]  
Gate - Emitter Voltage, VGE [V]  
Fig 6. Saturation Voltage vs. V  
Fig 5. Saturation Voltage vs. V  
GE  
GE  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
700  
600  
500  
400  
300  
200  
100  
0
Common Emitter  
Common Emitter  
VGE = 0V, f = 1MHz  
±
15V  
VCC = 300V, VGE  
IC = 5A  
=
℃
TC = 25  
℃ ━━  
= 25  
TC  
TC = 125 ------  
℃
Ton  
Tr  
100  
Cies  
Coes  
Cres  
10  
1
10  
Collector - Emitter Voltage, VCE [V]  
10  
100  
Gate Resistance, RG [Ω]  
Fig 8. Turn-On Characteristics vs.  
Gate Resistance  
Fig 7. Capacitance Characteristics  
1000  
Common Emitter  
±
15V  
VCC = 300V, VGE  
C = 5A  
=
I
℃ ━━  
= 25  
TC  
℃
TC = 125 ------  
Eoff  
Eon  
Toff  
Eoff  
100  
Tf  
Toff  
Common Emitter  
Tf  
VCC = 300V, VGE = ± 15V  
IC = 5A  
℃ ━━  
= 25  
TC  
100  
℃
TC = 125 ------  
10  
10  
100  
Gate Resistance, RG [Ω]  
10  
100  
Gate Resistance, RG [Ω]  
Fig 9. Turn-Off Characteristics vs.  
Gate Resistance  
Fig 10. Switching Loss vs. Gate Resistance  
Common Emitter  
Common Emitter  
±
Ω
VGE = ± 15V, RG = 40Ω  
VGE  
TC  
TC = 125 ------  
=
15V, RG = 40  
℃ ━━  
25  
℃
℃ ━━  
= 25  
TC  
=
1000  
℃
TC = 125 ------  
100  
Ton  
Tr  
Toff  
Tf  
Toff  
Tf  
100  
10  
3
4
5
6
7
8
9
10  
3
4
5
6
7
8
9
10  
Collector Current, IC [A]  
Collector Current, IC [A]  
Fig 11. Turn-On Characteristics vs.  
Collector Current  
Fig 12. Turn-Off Characteristics vs.  
Collector Current  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
1000  
15  
12  
9
Common Emitter  
VGE = ± 15V, RG = 40Ω  
Common Emitter  
RL = 60Ω  
TC  
= 25℃ ━━  
℃
TC = 25  
TC = 125℃ ------  
300V  
200V  
VCC = 100V  
Eoff  
100  
Eon  
6
3
0
0
3
6
9
12  
15  
18  
3
4
5
6
7
8
9
10  
Gate Charge, Qg [nC]  
Collector Current, IC [A]  
Fig 14. Gate Charge Characteristics  
Fig 13. Switching Loss vs. Collector Current  
50  
40  
10  
Ic MAX. (Pulsed)  
50us  
10  
100us  
Ic MAX. (Continuous)  
㎳
1
DC Operation  
1
Single Nonrepetitive  
0.1  
0.01  
℃
Pulse TC = 25  
Curves must be derated  
linearly with increase  
in temperature  
Safe Operating Area  
℃
VGE = 20V, TC = 100  
10 100  
Collector-Emitter Voltage, VCE [V]  
1
1
1000  
0.1  
1
10  
100  
1000  
Collector-Emitter Voltage, VCE [V]  
Fig 16. Turn-Off SOA Characteristics  
Fig 15. SOA Characteristic  
10  
0.5  
1
0.2  
0.1  
0.05  
0.1  
Pdm  
0.02  
0.01  
t1  
t2  
Duty factor D = t1 / t2  
single pulse  
10-4  
Peak Tj = Pdm  
×
Zthjc + TC  
0.01  
10-5  
10-3  
10-2  
10-1  
100  
101  
Rectangular Pulse Duration [sec]  
Fig 17. Transient Thermal Impedance of IGBT  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
Package Dimension  
D-PAK  
6.60 ±0.20  
5.34 ±0.30  
2.30 ±0.10  
0.50 ±0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
1.02 ±0.20  
2.30 ±0.20  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
6.60 ±0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76 ±0.10  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
SGR5N60RUF Rev. A1  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™ PACMAN™  
GTO™  
HiSeC™  
I2C™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
SLIENT SWITCHER® UHC™  
SMART START™  
SPM™  
STAR*POWER™  
Stealth™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
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E2CMOS™  
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FACT™  
UltraFET®  
VCX™  
POP™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™ TinyLogic™  
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FACT Quiet Series™ MicroPak™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. H5  
Product Folder - Fairchild P/N SGR5N60RUF - Discrete, Short Circuit Rated IGBT  
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Fairchild's RUF series of Insulated Gate  
Bipolar Transistors (IGBTs) provide low  
conduction and switching losses as well as  
short circuit ruggedness. The RUF series is  
designed for applications such as motor  
control, uninterrupted power supplies (UPS)  
and general inverters where short circuit  
ruggedness is a required feature.  
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●
Short Circuit Rated 10us @ T =  
C
100°C, V = 15V  
G
●
●
High Speed Switching  
Low Saturation Voltage : V  
= 2.2  
CE(sat)  
V @ I = 5A  
C
●
High Input Impedance  
back to top  
Applications  
AC &DC Motor controls, General  
Purpose Inverters, Robotics, Servo  
Controls  
back to top  
Product Folder - Fairchild P/N SGR5N60RUF - Discrete, Short Circuit Rated IGBT  
Product status/pricing/packaging  
Product  
Product status Pricing*  
Package type  
$1.25 TO-252(DPAK)  
$1.25 TO-252(DPAK)  
Leads Packing method  
SGR5N60RUFTF  
SGR5N60RUFTM  
Full Production  
Full Production  
2
2
TAPE REEL  
TAPE REEL  
* 1,000 piece Budgetary Pricing  
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© Copyright 2002 Fairchild Semiconductor  

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