SGS10N60RUFTU [FAIRCHILD]
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN;
| 型号： | SGS10N60RUFTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN 双极性晶体管 |
| 文件： | 总7页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
IGBT
SGS10N60RUF
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.2 V @ I = 10A
CE(sat)
C
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
E
G
TO-220F
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGS10N60RUF
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
16
A
C
I
I
C
Collector Current
@ T = 100°C
10
A
C
Pulsed Collector Current
30
10
A
CM (1)
T
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T = 100°C
µs
W
W
°C
°C
SC
C
P
@ T
=
25°C
55
D
C
@ T = 100°C
22
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
2.3
θJC
θJA
Thermal Resistance, Junction-to-Ambient
--
62.5
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
µA
CES
GES
CE
CES
GE
, V = 0V
± 100
nA
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 10mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
C
C
C
CE
= 10A,
= 16A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
660
115
25
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
--
--
ns
ns
nS
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
36
50
200
--
V
R
= 300 V, I = 10A,
C
d(off)
f
CC
= 20Ω, V = 15V,
158
141
215
356
16
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
--
500
--
ts
t
t
t
t
d(on)
r
33
--
Turn-Off Delay Time
Fall Time
42
60
350
--
V
= 300 V, I = 10A,
C
d(off)
f
CC
R
= 20Ω, V = 15V,
242
161
452
613
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
C
on
off
ts
--
860
V
= 300 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
µs
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
30
5
45
10
16
--
nC
nC
nC
nH
g
V
V
= 300 V, I = 10A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
8
Le
Measured 5mm from PKG
7.5
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
30
25
20
15
10
5
40
35
30
25
20
15
10
5
20V
15V
Common Emitter
Common Emitter
VGE = 15V
℃
TC = 25
TC
= 25℃ ━━
TC = 125℃ ------
12V
VGE = 10V
0
0
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
16
4.0
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
14
12
10
8
3.5
3.0
2.5
2.0
20A
10A
6
4
IC = 5A
1.5
1.0
Duty cycle : 50%
2
℃
T
C = 100
Power Dissipation = 15W
0
0.1
1
10
100
1000
-50
0
50
100
150
℃
[
Case Temperature, TC
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 125℃
Common Emitter
℃
TC = 25
16
12
8
20A
20A
12
4
4
0
10A
10A
IC = 5A
IC = 5A
0
0
4
8
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
1400
1200
1000
800
600
400
200
0
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
±
15V
VCC = 300V, VGE
IC = 10A
=
℃
TC = 25
℃ ━━
= 25
TC
TC = 125 ------
Ton
Tr
℃
100
Cies
Coes
Cres
10
10
100
Gate Resistance, RG [Ω]
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
Common Emitter
±
15V
VCC = 300V, VGE
C = 10A
=
±
15V
VCC = 300V, VGE
C = 10A
=
I
I
1000
℃ ━━
= 25
TC
TC = 125 ------
℃ ━━
= 25
TC
C = 125 ------
℃
℃
T
Toff
Eoff
Eon
Toff
Tf
Eoff
Tf
100
100
10
100
Gate Resistance, RG [Ω]
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
Common Emitter
±
25
±
VGE
TC
TC = 125 ------
=
15V, RG = 20Ω
℃ ━━
℃
VGE
TC
TC = 125 ------
=
15V, RG = 20Ω
℃ ━━
= 25
=
℃
100
Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
15
12
9
Common Emitter
RL = 30 Ω
Common Emitter
±
VGE
TC
TC = 125 ------
=
15V, RG = 20Ω
℃ ━━
25
1000
℃
TC = 25
=
℃
300 V
200 V
VCC = 100 V
Eoff
6
100
3
Eon
10
0
5
15
20
0
10
20
30
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
50
100
IC MAX. (Pulsed)
50us
IC MAX. (Continuous)
10
1
100us
㎳
1
10
DC Operation
Single Nonrepetitive
0.1
0.01
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
1
1
10
100
1000
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
0.02
Pdm
0.01
t1
t2
single pulse
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
Package Dimension
TO-220F (FS PKG CODE AQ)
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
SGS10N60RUF Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
PACMAN™
SuperSOT™-3
ACEx™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Star* Power™
Stealth™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1
相关型号：
©2020 ICPDF网 联系我们和版权申明