SGU20N40L [FAIRCHILD]
High input impedance; 高输入阻抗
| 型号： | SGU20N40L |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High input impedance |
| 文件： | 总5页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2001
IGBT
SGR20N40L / SGU20N40L
General Description
Features
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
•
•
•
•
•
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount : SGR20N40L
Straight Lead : SGU20N40L
Application
Strobe flash.
C
C
G
D-PAK
E
G
I-PAK
G C E
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGR / SGU20N40L
Units
V
V
V
Collector - Emitter Voltage
400
± 6
CES
GES
Gate - Emitter Voltage
V
I
Pulsed Collector Current
150
A
CM (1)
P
M a x i m u m P o w e r D i s s i p a t i o n
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T = 25°C
45
W
C
C
T
-40 to +150
-40 to +150
°C
°C
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
3.0
50
θJC
(D-PAK)
(I-PAK)
Thermal Resistance, Junction-to-Ambient (PCB Mount)
Thermal Resistance, Junction-to-Ambient
--
θJA
θJA
(2)
--
110
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
V
= 0V, I = 1mA
450
--
--
--
--
--
V
CES
CES
GES
GE
CE
GE
C
I
I
Collector Cut-Off Current
= V
= V
, V = 0V
10
µA
µA
CES
GES
GE
G-E Leakage Current
, V = 0V
--
± 0.1
CE
On Characteristics
V
G-E Threshold Voltage
I
I
= 1mA,
V
= V
GE
0.5
2.0
1.0
4.5
1.4
8.0
V
V
GE(th)
C
CE
V
C-E Saturation Current
= 150A, V = 4.5V
CE(sat)
C
GE
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
3800
50
--
--
--
pF
pF
pF
ies
V
= 0V, V = 30V,
CE
GE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
35
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
0.2
1.7
0.3
1.5
--
--
µs
µs
µs
µs
d(on)
V
V
= 300V, I = 150A,
C
CC
Rise Time
r
= 4.5V, R = 15Ω*
GE
G
Turn-Off Delay Time
Fall Time
0.5
2.0
d(off)
f
Resistive Load
* Notes : Recommendation of R Value : R ≥15Ω
G
G
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
200
150
100
50
7
6
5
4
3
2
Common Emitter
TC = 25℃
Common Emitter
VGE = 4.5V
5.0V
4.5V
150A
4.0V
3.5V
3.0V
100A
VGE = 2.5V
IC = 70A
0
0
2
4
6
8
-50
0
50
100
150
℃
[ ]
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = -40℃
Common Emitter
T
C = 25℃
16
12
8
150A
150A
100A
IC = 70A
4
0
100A
4
IC = 70A
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 4. Saturation Voltage vs. V
Fig 3. Saturation Voltage vs. V
GE
GE
20
10000
Common Emitter
Cies
TC = 125℃
16
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
12
8
150A
100
Coes
100A
4
Cres
IC = 70A
10
0
0
10
20
30
40
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Capacitance Characteristics
GE
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
200
175
150
125
100
75
6
4
2
0
Common Emitter
VCC = 300V, RL = 2
Ω
℃
C = 25
T
50
25
0
0
2
4
6
8
10
0
10
20
30
40
50
60
Gate - Emitter Voltage, VGE [V]
Gate-Charge, Qg [nC]
Fig 7. Turn-On Characteristics vs.
Gate Resistance
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
相关型号：
SGU20N40LTU_NL
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-251, LEAD FREE, IPAK-3
FAIRCHILD
SGU2N60UFTU
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-251, IPAK-3
FAIRCHILD
SGU6N60UFTU
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251, IPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明