SI3441DVD84Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6;
| 型号： | SI3441DVD84Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
PRELIMINARY
Si3441DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
• –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V
DS(ON) = 110 mΩ @ VGS = –2.5 V
R
• Low gate charge
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• Battery protection
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
±8
–3.5
(Note 1a)
–20
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.441
Si3441DV
7’’
8mm
3000 units
Si3441DV Rev A (W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
V
GS = 0 V, ID = –250 µA
Breakdown Voltage Temperature
Coefficient
–12
∆BVDSS
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –16 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–10
–0.8
3
–1.5
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –3.5 A
V
VGS = –4.5 V, ID = –3.5A,TJ=125°C
60
82
77
80
110
112
mΩ
GS = –2.5 V, ID = –3.1 A
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –3.5 A
A
S
Forward Transconductance
11
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
779
121
56
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
9
20
19
43
20
10
ns
ns
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
27
11
7.2
1.7
1.5
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –10 V,
ID = –3.5 A,
V
GS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.8
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in2 pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si3441DV Rev A (W)
Typical Characteristics
15
2
1.8
1.6
1.4
1.2
1
VGS = -4.5V
-3.0V
-2.5V
-3.5V
VGS=-2.0V
12
9
-2.0V
-2.5V
6
-3.0V
-3.5V
-4.5V
3
-1.5V
0.8
0
0
3
6
9
12
15
0
1
2
3
4
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
1.2
1.1
1
0.22
ID = -1.8A
ID = -3.5A
VGS = -4.5V
0.18
0.14
0.1
TA = 125oC
TA = 25oC
0.9
0.8
0.7
0.06
0.02
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
VDS = -5V
TA = -55oC
25oC
125oC
VGS = 0V
1
TA = 125oC
6
0.1
25oC
4
0.01
-55oC
2
0.001
0
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3441DV Rev A (W)
Typical Characteristics
5
1000
800
600
400
200
0
f = 1 MHz
VGS = 0 V
ID = -3.5A
VDS = -5V
-10V
CISS
4
3
2
1
0
-15V
COSS
CRSS
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
8
100
10
SINGLE PULSE
R
θJA = 156°C/W
TA = 25°C
RDS(ON) LIMIT
100µs
1ms
10ms
6
100ms
1
1s
4
DC
VGS = -10V
SINGLE PULSE
0.1
0.01
RθJA = 156oC/W
2
T
A = 25oC
0
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) + RθJA
0.2
R
θJA = 156oC/W
0.1
0.1
0.05
0.02
P(pk)
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3441DV Rev A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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