SI4466 [FAIRCHILD]
Single N-Channel 2.5V Specified PowerTrench MOSFET; 单N沟道2.5V指定的PowerTrench MOSFET
| 型号： | SI4466 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4466DY
Single N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
• 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V
RDS(on) = 0.010 Ω @ VGS = 2.5 V.
• Low gate charge (47nC typical).
• Fast switching speed.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• High power and current handling capability.
• DC/DC converter
• Load switch
• Battery protection
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
20
V
V
A
12
±
(Note 1a)
(Note 1a)
15
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
JC
θ
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
4466
Si4466DY
13’’
12mm
2500 units
2001 Fairchild Semiconductor International
Si4466DY Rev. A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
20
V
µ
GS = 0 V, ID = 250 A
V
Breakdown Voltage Temperature
Coefficient
29
∆
DSS
µ
°
°
mV/ C
BV
∆
I
D = 250 A, Referenced to 25 C
TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
µ
A
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
GS = 12 V, VDS = 0 V
GS = –12 V, VDS = 0 V
100
nA
nA
–100
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.4
25
0.9
-4
1.5
V
µ
DS = VGS, ID = 250 A
V
Gate Threshold Voltage
Temperature Coefficient
∆
µ
°
°
VGS(th)
I
D = 250 A, Referenced to 25 C
mV/ C
∆
TJ
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID =15 A
VGS = 4.5 V, ID =15 A,
0.006 0.0075
0.009 0.0130
0.008 0.0100
Ω
°
TJ=125 C
VGS = 2.5 V, ID =12 A
VGS = 4.5 V, VDS = 5.0 V
ID(on)
gFS
On-State Drain Current
A
S
Forward Transconductance
VDS = 5 V, ID = 15 A
70
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
4700
850
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
310
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD = 10 V, ID = 1 A,
20
27
95
35
47
7
32
44
ns
ns
Ω
VGS = 4.5 V, RGEN = 6
133
56
ns
ns
Qg
VDS = 10 V, ID = 15 A,
VGS = 5 V,
66
nC
nC
nC
Qgs
Qgd
10.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
0.65
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
c) 125° C/W when
a) 50° C/W when
b) 105° C/W when
mounted on a 0.003 in2
pad of 2 oz. copper.
mounted on a 0.5 in2
pad of 2 oz. copper.
mounted on a 0.02 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4466DY Rev. A
Typical Characteristics
50
2.5
2
VGS= 4.5V
2.5V
40
30
20
10
0
2.0V
3.0V
VGS= 2.0V
1.5
1
2.5V
3.0V
4.5V
40
1.5V
0.5
0
0.4
0.8
1.2
1.6
2
0
10
20
30
50
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
0.024
0.018
0.012
0.006
0
1.6
ID= 15A
ID= 7.0A
VGS= 4.5V
1.4
1.2
1
TJ= 125oC
25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
50
40
30
20
10
0
VGS= 0
TJ= -55oC
VDS= 5V
25oC
10
1
125oC
TJ=125oC
25oC
125oC
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
V
SD, BODY DIODE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 5. Transfer Characteristics.
Si4466DY Rev. A
Typical Characteristics (continued)
5
7000
6000
5000
4000
3000
2000
1000
0
ID= 13A
4
VDS= 5V
Ciss
10V
3
15V
2
1
0
Coss
Crss
0
4
8
12
16
20
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
RDS(ON) Limit
100 s
µ
SINGLE PULSE
RθJA=125oC/W
TA=25oC
1ms
10ms
100ms
1s
10s
1
DC
VGS= 4.5V
0.1
SINGLE
PULSE
R JA= 125oC/W
θ
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
0.2
0.2
JA
θ
R
= 125°C/W
JA
θ
0.1
0.1
0.05
0.05
P(pk)
0.02
0.02
0.01
t
1
t
2
0.01
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
θ
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si4466DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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