SI4532DYD84Z [FAIRCHILD]

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
SI4532DYD84Z
型号: SI4532DYD84Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

开关 脉冲 光电二极管 晶体管
文件: 总4页 (文件大小:327K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
September 1999  
Si4532DY*  
Dual N- and P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These dual N- and P-Channel enhancement mode power  
field effect transistors are produced using Fairchild's  
propretary, high cell density, DMOS technology. This very  
high density process is especially tailored to minimize  
on-state resistance and provide superior switching  
performance. These devices are particularly suited for  
low voltage applications such as notebook computer  
power management and other battery powered circuits  
where fast switching, low in-line power loss, and  
resistance to transients are needed.  
• N-Channel 3.9A, 30V.RDS(ON) = 0.065@VGS = 10V  
RDS(ON) = 0.095@VGS = 4.5V.  
• P-Channel -3.5A,-30V.RDS(ON)= 0.085@VGS = -10V  
RDS(ON)= 0.190 @VGS = -4.5V.  
• High density cell design for extremely low RDS(ON)  
.
• High power and current handling capability in a widely  
used surface mount package.  
• Dual (N & P-Channel) MOSFET in surface mount  
package.  
'ꢃ  
'ꢃ  
'ꢀ  
'ꢀ  
*ꢃ  
6ꢃ  
*ꢀ  
62ꢁꢂ  
6ꢀ  
$EVROXWHꢀ0D[LPXPꢀ5DWLQJVꢀꢀ  
°
7KHUPDOꢀ&KDUDFWHULVWLFV  
θ
°
°
θ
3DFNDJHꢀ0DUNLQJꢀDQGꢀ2UGHULQJꢀ,QIRUPDWLRQ  
1999 Fairchild Semiconductor Corporation  
Si4532DY, Rev. C  
(OHFWULFDOꢀ&KDUDFWHULVWLFVꢀꢀꢀꢀꢀꢀ  
6\PERO  
3DUDPHWHU  
7HVWꢀ&RQGLWLRQV  
7\SH 0LQ 7\S 0D[ 8QLWV  
2IIꢀ&KDUDFWHULVWLFV  
µ
µ
µ
µ
ꢀꢀꢀ  
2Qꢀ&KDUDFWHULVWLFV  
µ
µ
'\QDPLFꢀ&KDUDFWHULVWLFV  
Si4532DY, Rev. C  
(OHFWULFDOꢀ&KDUDFWHULVWLFVꢀꢀ  
6\PERO  
3DUDPHWHU  
7HVWꢀ&RQGLWLRQV 7\SH 0LQ 7\S 0D[ 8QLWV  
ꢀꢀ  
6ZLWFKLQJꢀ&KDUDFWHULVWLFVꢀ  
µ
µ
'UDLQꢁ6RXUFHꢀ'LRGHꢀ&KDUDFWHULVWLFVꢀDQGꢀ0D[LPXPꢀ5DWLQJV  
Notes:  
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of  
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
a) 78° C/W when  
c) 135° C/W when  
mounted on a minimum  
mounting pad.  
b) 125° C/W when  
mounted on a 0.02 in2  
pad of 2 oz. copper.  
mounted on a 0.05 in2  
pad of 2 oz. copper.  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
Si4532DY, Rev. C  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

相关型号:

SI4532DYL86Z

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD

SI4532DYL99Z

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD

SI4532DYS62Z

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD

SI4532DY_NL

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD

SI4539

Dual N & P-Channel Enhancement Mode Field Effect Transistor
FAIRCHILD

SI4539ADY

N- and P-Channel 30-V (D-S) MOSFET
VISHAY

SI4539ADY-E3

Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY

SI4539ADY-T1

N- and P-Channel 30-V (D-S) MOSFET
VISHAY

SI4539ADY-T1-E3

TRANSISTOR 4400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY

SI4539ADY_05

N- and P-Channel 30-V (D-S) MOSFET
VISHAY

SI4539DY

Dual N & P-Channel Enhancement Mode Field Effect Transistor
FAIRCHILD

SI4539DY

Transistor,
VISHAY