SI4542DYS62Z [FAIRCHILD]
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4542DYS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4542DY
30V Complementary PowerTrench MOSFET
General Description
Features
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
•
Q1: N-Channel
6 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V
RDS(on) = 35 mΩ @ VGS = 4.5V
•
Q2: P-Channel
Applications
–6 A, –30 V
R
DS(on) = 32 mΩ @ VGS = –10V
DS(on) = 45 mΩ @ VGS = –4.5V
• DC/DC converter
R
• Power management
Q2
D2
5
6
7
8
4
3
2
1
D2
D1
D1
Q1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
6
–30
±20
–6
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
20
–20
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1.2
1
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
4542
Si4542DY
13”
12mm
Si4542DY Rev A
2001 Fairchild Semiconductor International
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
Q1
Q2
Q1
Q2
30
–30
V
Voltage
Breakdown Voltage
Temperature Coefficient
23
–21
∆BVDSS
∆TJ
mV/°C
IDSS
Zero Gate Voltage Drain
Current
Q1
Q2
1
–1
µA
V
DS = –24 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 6 A
Q1
Q2
Q1
Q2
1
–1
1.5
–1.7
–4
3
–3
V
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
mV/°C
mΩ
4
RDS(on)
Static Drain-Source
On-Resistance
Q1
19
32
25
28
48
35
VGS = 10 V, ID = 6 A, TJ = 125°C
VGS = 4.5 V, ID = 5 A
Q2
VGS = –10 V, ID = –6 A
VGS = –10 V, ID = –6 A, TJ = 125°C
VGS = –4.5 V, ID = –5 A
21
29
30
32
51
45
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q1
Q2
Q1
Q2
20
–20
A
S
V
GS = –10 V, VDS = –5 V
Forward Transconductance VDS = 15 V, ID = 6 A
VDS = –10 V, ID = –6 A
18
16
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
830
1540
185
400
80
pF
pF
pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer
Capacitance
170
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
13
10
22
18
47
5
18
9
15
2.8
4
3.1
5
12
24
18
35
29
75
12
30
13
20
ns
ns
VDS = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
ns
VDS = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
Q1
V
nC
nC
nC
DS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
DS = –10 V, ID = –6 A, VGS = –5V
V
Si4542DY Rev A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
A
V
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
0.7
–0.7
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si4542DY Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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