SI4920DYL86Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4920DYL86Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4920DY
Dual N-Channel, Logic Level, PowerTrenchâ MOSFET
General Description
Features
6 A, 30 V. RDS(ON) = 0.028 W @ VGS = 10 V
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
R
DS(ON) = 0.035 W @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low
RDS(ON)
.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
High power and current handling capability.
SuperSOTTM-6
SuperSOTTM-8
SOIC-16
SOT-23
SO-8
SOT-223
D2
5
6
7
8
4
D2
D1
D1
3
2
G2
S2
1
G1
pin 1
SO-8
S1
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
Si4920DY
Units
Drain-Source Voltage
30
V
VDSS
VGSS
ID
Gate-Source Voltage
±20
V
A
Drain Current - Continuous
- Pulsed
(Note 1a)
(Note 1a)
6
20
2
Power Dissipation for Single Operation
W
PD
(Note 1b)
(Note 1c)
1.6
0.9
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
78
40
°C/W
°C/W
(Note 1)
© 2001 Fairchild Semiconductor International
Si4920DY Rev.A
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
V
ID = 250 µA, Referenced to 25 oC
mV /oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
23
DBVDSS/DTJ
1
µA
µA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
1
1.5
-4
3
V
mV /oC
Gate Threshold Voltage Temp. Coefficient
DVGS(th)/DTJ
RDS(ON)
Static Drain-Source On-Resistance
0.023
0.036
0.029
0.028
0.044
0.035
VGS = 10 V, I D = 6 A
W
TJ =125°C
VGS = 4.5 V, I D = 5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, I D= 6 A
ID(ON)
gFS
On-State Drain Current
20
A
S
Forward Transconductance
18
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
830
185
80
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
6
12
18
ns
ns
tD(on)
tr
tD(off)
tf
VDS= 15 V, I D = 1 A
10
VGS = 10 V , RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
5
29
12
13
ns
ns
Qg
Qgs
Qgd
VDS = 15 V, I D = 7.5 A,
GS = 5 V
9
nC
nC
nC
2.8
3.1
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
IS
0.73
VSD
VGS = 0 V, IS = 1.3 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Si4920DY Rev.A
Typical Electrical Characteristics
40
5
4
3
2
1
0
V
GS
=10V
5.5V
4.5V
4.0V
V
= 2.5V
GS
32
24
16
8
3.5V
3.0 V
3.5 V
3.0V
4.5 V
10V
2.5V
0
0
1
2
3
4
0
6
12
18
24
30
V
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.15
0.12
0.09
0.06
0.03
0
1.6
ID = 3A
I
= 6A
D
V
= 10V
GS
1.4
1.2
1
TA = 125°C
25°C
0.8
0.6
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
J
Figure 3. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Temperature.
20
25
20
15
10
5
T
= -55°C
V
=5.0V
V
= 0V
J
DS
GS
25°C
125°C
T
J
= 125°C
1
0.1
25°C
-55°C
0.01
0.001
0
0
0.2
V
0.4
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1
1.2
1.4
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4920DYA Rev.A
Typical Electrical Characteristics
1500
500
10
VDS = 5V
ID = 6A
C
iss
10V
8
6
4
2
0
15V
200
100
50
C
oss
C
rss
f = 1 MHz
= 0 V
V
GS
0.1
0.2
0.5
1
2
5
10
30
0
3
6
9
12
15
18
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
30
25
100
50
SINGLE PULSE
=135 °C/W
R
JA
q
10
TA = 25°C
20
15
10
5
2
0.5
V
=10V
GS
SINGLE PULSE
R
q
= 135°C/W
JA
0.05
0.01
T
A
= 25°C
0
0.01
0.1
0.5
10
50 100
300
0.1
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
R
=135° C/W
JA
q
0.1
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
q
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
Si4920DY Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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