SI9435DYD84Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;


型号：	SI9435DYD84Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
文件：	总5页 (文件大小：101K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

January 2001

Si9435DY

P-Channel Logic Level PowerTrench MOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

• –5.3 A, –30 V. R_DS(ON)= 50 mΩ @ V_GS= –10 V

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain

superior switching performance.

_DS(ON)= 80 mΩ @ V_GS= –4.5 V

• Low gate charge

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

• Fast switching speed

• High performance trench technology for extremely

Applications

low R_DS(ON)

• DC/DC converter

• Load switch

• High power and current handling capability

• Motor Drive

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–30

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

-5.3

-20

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

9435

Si9435DY

13’’

12mm

2500 units

Si9435DY Rev A(W)

2001 Fairchild Semiconductor International

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–30

V_GS= 0 V, I_D= –250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

–22

I_D= –250 µA, Referenced to 25°C

V_DS= –24 V, V_GS= 0 V

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

–1

µA

I_GSSF

I_GSSR

V_GS= 20 V,

V_DS= 0 V

100

V_GS= –20 V, V_DS= 0 V

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

–1

–1.7

–3

V_DS= V_GS, I_D= –250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= –250 µA, Referenced to 25°C

mV/°C

mΩ

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= –10 V,

V_GS= –10 V, I_D= –5.3 A, T_J=125°C

_GS= –4.5 V, I_D= –4.2A,

I_D= –5.3 A

I_D(on)

g_FS

On–State Drain Current

V_GS= –10 V,

V_DS= –15 V,

V_DS= –5 V

I_D= –5.3 A

–20

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

690

306

V_DS= –15 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= –15 V,

V_GS= –10 V,

I_D= –1 A,

R_GEN= 6 Ω

2.4

4.8

Q_g

Q_gs

Q_gd

_DS= –15 V,

I_D= –5.3 A,

V_GS= –10 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–5.3

Drain–Source Diode Forward

V_SD

_GS= 0 V, I_S= –5.3 A (Note 2)

–0.86 –1.2

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 50°C/W when

mounted on a 1in²

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in²

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Si9435DY Rev A(W)

Typical Characteristics

2.5

V_GS= -10.0V

V_GS= -3.5V

-7.5V

-5.0V

-6.5V

-6.0V

-4.0V

-4.5V

1.5

-5.5V

-3.0V

-7.0V

-10.0V

0.5

150

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

1.0

0.8

0.6

0.2

I_D= -5.3A

V_GS= -10V

0.15

0.1

0.05

T_A= 125^oC

T_A= 25^oC

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

25^oC

T_A= -55^oC

V_DS= -10V

125^oC

T_A= 125^oC

25^oC

-55^oC

0.1

0.01

0.001

0.2

0.4

0.6

0.8

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Si9435DY Rev A(W)

Typical Characteristics

1000

800

600

400

200

I_D= -5.3A

V_DS= -5V

f = 1 MHz

_GS= 0 V

-10V

C_ISS

-15V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

1ms

10ms

100ms

R_DS(ON)LIMIT

SINGLE PULSE

R^θ_JA= 125°C/W

_A= 25°C

10s

V_GS= -10V

SINGLE PULSE

R^θ_JA= 125^oC/W

0.1

0.01

_A= 25^oC

0.1

100

0.001

0.01

0.1

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R^θ_JA(t) = r(t) + R^θ

R^θ_JA= 125^oC/W

0.2

0.1

0.05

P(pk)

0.02

0.01

t₁

SINGLE PULSE

0.01

t₂

T_J- T_A= P * R^θ_JA(t)

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

Si9435DY Rev A(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

PowerTrench

QFET™

QS™

SyncFET™

TinyLogic™

UHC™

ACEx™

FASTr™

GlobalOptoisolator™

GTO™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

QT Optoelectronics™

VCX™

HiSeC™

Quiet Series™

SILENT SWITCHER

SMART START™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

FAST

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. G

SI9435DYD84Z [FAIRCHILD]

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