TIP122TU [FAIRCHILD]
Medium Power Linear Switching Applications; 中功率线性开关应用
| 型号： | TIP122TU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Medium Power Linear Switching Applications |
| 文件： | 总5页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2008
TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
•
•
Medium Power Linear Switching Applications
Complementary to TIP125/126/127
Equivalent Circuit
C
B
TO-220
1
R1
R2
1.Base 2.Collector 3.Emitter
E
R1 @ 8kW
R2 @ 0.12kW
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
VCBO
Collector-Base Voltage : TIP120
60
80
100
V
V
V
: TIP121
: TIP122
VCEO
Collector-Emitter Voltage : TIP120
60
80
100
V
V
V
: TIP121
: TIP122
VEBO
IC
ICP
IB
Emitter-Base Voltage
5
V
A
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
5
8
120
A
mA
W
W
°C
°C
PC
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
2
65
TJ
150
TSTG
Storage Temperature
- 65 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
1
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
IC = 100mA, IB = 0
60
80
100
V
V
V
ICEO
Collector Cut-off Current
: TIP120
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
: TIP121
: TIP122
ICBO
Collector Cut-off Current
: TIP120
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
: TIP121
: TIP122
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
VBE = 5V, IC = 0
2
mA
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
1000
1000
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
2.0
4.0
V
V
VBE(on)
Cob
* Base-Emitter On Voltage
Output Capacitance
VCE = 3V, IC = 3A
2.5
V
VCB = 10V, IE = 0, f =
0.1MHz
200
pF
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
2
Typical characteristics
10000
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VCE = 4V
IC = 250IB
1000
VBE(sat)
VCE(sat)
100
0.1
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
f=0.1MHz
1
100
Cob
0.1
TIP120
Cib
TIP121
TIP122
10
0.1
1
10
100
0.01
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
3
Mechanical Dimensions
TO220
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
4
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. A1
www.fairchildsemi.com
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