TIP32B [FAIRCHILD]

Medium Power Linear Switching Applications; 中功率线性开关应用
TIP32B
型号: TIP32B
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Medium Power Linear Switching Applications
中功率线性开关应用

开关
文件: 总4页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TIP32 Series(TIP32/32A/32B/32C)  
Medium Power Linear Switching Applications  
Complement to TIP31/31A/31B/31C  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP32  
- 40  
- 60  
- 80  
V
V
V
V
CBO  
CEO  
EBO  
: TIP32A  
: TIP32B  
: TIP32C  
- 100  
Collector-Emitter Voltage : TIP32  
- 40  
- 60  
- 80  
-100  
V
V
V
V
: TIP32A  
: TIP32B  
: TIP32C  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
V
A
I
I
I
- 3  
C
- 5  
A
CP  
B
- 3  
A
P
P
Collector Dissipation (T =25°C)  
40  
2
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: TIP32  
I
= - 30mA, I = 0  
-40  
-60  
-80  
V
V
V
V
C
B
: TIP32A  
: TIP32B  
: TIP32C  
-100  
I
Collector Cut-off Current  
: TIP32/32A  
CEO  
V
V
= - 30V, I = 0  
- 0.3  
- 0.3  
mA  
mA  
CE  
CE  
B
: TIP32B/32C  
= - 60V, I = 0  
B
I
Collector Cut-off Current  
: TIP32  
CES  
V
V
V
V
= - 40V, V = 0  
- 200  
- 200  
- 200  
- 200  
µA  
µA  
µA  
µA  
CE  
CE  
CE  
CE  
EB  
: TIP32A  
: TIP32B  
: TIP32C  
= - 60V, V = 0  
EB  
= - 80V, V = 0  
EB  
= - 100V, V = 0  
CE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
C
h
V
V
= - 4V, I = - 1A  
25  
10  
FE  
CE  
CE  
C
= - 4V, I = - 3A  
50  
- 1.2  
- 1.8  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= - 3A, I = - 375mA  
V
V
CE  
BE  
C
B
(sat)  
V
V
= - 4V, I = - 3A  
C
CE  
CE  
f
= - 10V, I = - 500mA  
3.0  
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
1000  
100  
10  
-10000  
-1000  
-100  
VCE = -4V  
IC/IB = 10  
VBE(sat)  
VCE(sat)  
1
-10  
-1  
-10  
-100  
-1000  
-10000  
-1  
-10  
-100  
-1000  
-10000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
-10  
IC(MAX) (PULSE)  
100µs  
IC(MAX) (DC)  
-1  
TIP32 VCEO MAX.  
TIP32A VCEO MAX.  
TIP32B VCEO MAX.  
TIP32C VCEO MAX.  
-0.1  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
-10  
-100  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Safe Operating Area  
Figure 4. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

相关型号:

TIP32B-6200

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6203

5A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP32B-6226

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6255

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6258

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6261

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6263

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS

TIP32B-6264

5A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP32B-6265

5A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS

TIP32B-BP

Silicon PNP Power Transistors
MCC

TIP32B-BP-HF

Power Bipolar Transistor,
MCC

TIP32B-DR6259

5A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
RENESAS