TIP42CTU [FAIRCHILD]
PNP Epitaxial Silicon Transistor; PNP外延硅晶体管
| 型号： | TIP42CTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Epitaxial Silicon Transistor |
| 文件： | 总5页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2009
TIP42/TIP42A/TIP42B/TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41/TIP41A/TIP41B/TIP41C
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
: TIP42
Value
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
- 40
- 60
- 80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
- 100
VCEO
: TIP42
- 40
- 60
- 80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
- 100
VEBO
IC
ICP
IB
Emitter-Base Voltage
- 5
V
A
Collector Current (DC)
Collector Current (Pulse)
Base Current
- 6
-10
A
-2
A
PC
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
Junction Temperature
Storage Temperature
65
2
W
W
°C
°C
TJ
150
TSTG
- 65 to 150
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
1
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP42
IC = -30mA, IB = 0
-40
-60
-80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
-100
ICEO
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
VCE = -30V, IB = 0
VCE = -60V, IB = 0
-0.7
-0.7
mA
mA
ICES
Collector Cut-off Current
: TIP42
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-400
-400
-400
-400
μA
μA
μA
μA
: TIP42A
: TIP42B
: TIP42C
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
VEB = -5V, IC = 0
-1
mA
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
30
15
75
V
CE(sat)
BE(sat)
fT
* Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA
-1.5
-2.0
V
V
V
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCE = -4V, IC = -6A
VCE = -10V, IC = -500mA,
f = 1MHz
3.0
MHz
* Pulse Test: PW≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
-2.0
-1.6
-1.2
-0.8
-0.4
-0.0
VCE = -4V
IC/IB = 10
VBE(sat)
100
10
1
VCE(sat)
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
80
60
40
20
0
-100
IC(MAX) (PULSE)
IC(MAX) (DC)
-10
-1
TIP42
TIP42A
TIP42B
TIP42C
-0.1
0
25
50
75
100
125
150
175
-1
-10
-100
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
Figure 4. Power derating
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
3
Mechanical Dimensions
TO-220
Dimensions in Millimeters
www.fairchildsemi.com
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
4
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Definition of Terms
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
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Advance Information
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Formative / In Design
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First Production
Full Production
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Obsolete
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The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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