TN3019A_NL [FAIRCHILD]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, TO-226AE, 3 PIN;
| 型号： | TN3019A_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, TO-226AE, 3 PIN 开关 晶体管 |
| 文件： | 总10页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN3019A
TO-226
C
B
E
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 500 mA and
collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
140
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
7.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
TN3019A
PD
Total Device Dissipation
Derate above 25 C
1.0
8.0
W
mW/ C
°
°
Thermal Resistance, Junction to Case
125
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
50
Rθ
C/W
°
JA
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 0
80
140
7.0
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I = 100 A, I = 0
µ
C
E
I = 100 A, I = 0
µ
E
C
VCB = 90 V, IE = 0
0.01
10
0.01
A
A
A
µ
µ
µ
VCB = 90 V, I = 0, T = 150 C
°
E
A
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC=150 mA,VCE=10 V,TA=-55°C
IC = 500 mA, VCE = 10 V*
IC = 1.0 A, VCE = 10 V*
50
90
100
40
50
15
300
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.2
0.5
1.1
V
V
V
VCE(sat)
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 15 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 10 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
100
80
MHz
Output Capacitance
Input Capacitance
12
60
pF
pF
Cobo
Cibo
hfe
VBE = 0.5 V, IC = 0, f = 1.0 MHz
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
400
Collector Base Time Constant
Noise Figure
IE = 10 mA, VCB = 10 V,
f = 4.0 MHz
IC = 100 mA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
400
4.0
pS
dB
rb’Cc
NF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
1.2
1
350
β = 10
VCE = 1V
300
250
200
150
100
50
125 °C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
- 40 °C
- 40 °C
125 °C
0
0.1
0.3
1
3
10
30
100 300 1000
0.1
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
β = 10
1
- 40 °C
0.8
0.4
0
- 40°C
0.8
0.6
0.4
0.2
0
25 °C
125°C
25 °C
125 °C
V
= 1V
CE
0.1
1
10
100
1000
0.1
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
10
100
V
= 80V
f = 1.0 MHz
CB
80
60
40
1
C
eb
20
C
cb
0
0.1
0.1
1
10
50
25
50
75
100
125
REVERSE BIAS VOLTAGE (V)
TA- AMBIENT TEMPERATURE ( C)
°
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Small Signal Current Gain at 20 MHz
10
Switching Times vs
Collector Current
f = 20 MHz
1000
800
600
400
200
0
8
V
= 10V
CE
6
4
2
0
t
V
= 1.0V
s
CE
t
f
t
t
r
d
10
100
500
1000
1
10
100
500
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
Turn On and Turn Off Times vs
Collector Current
1
0.75
0.5
1000
800
600
400
200
0
I
V
= I
= 50V
= I
C
B2
B1
TO-226
10
CC
0.25
0
t
off
t
on
10
100
500
1000
0
25
50
75
100
125
150
TEMPERATURE (o C)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Test Circuit
50 V
- 4.0 V
IC
Rb
RL
150 mA
200 mA
500 mA
314 Ω
157 Ω
94 Ω
330 Ω
167 Ω
100 Ω
RL
1.0 KΩ
To Sampling Scope
Rise Time ≤ 5.0 ns
Input Z ≈ 100 kΩ
- 1 µF
Rb
50 Ω
1.5 µS
10 V
0 V
Pulse Source
Rise Time ≤ 5.0 ns
Fall Time ≤ 10 ns
FIGURE 1: tON, tOFF Test Circuit
TO-226AE Tape and Reel Data
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
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FAST
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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2. A critical component is any component of a life
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Not In Production
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The datasheet is printed for reference information only.
Rev. G
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