TN6727AD27Z [FAIRCHILD]
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-226;型号: | TN6727AD27Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-226 开关 晶体管 |
文件: | 总3页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TN6727A
C
TO-226
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1A. Sourced from Process 77. See TN6726A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value
Symbol
VCES
VCBO
VEBO
IC
Parameter
Units
Collector-Emitter Voltage
40
V
Collector-Base Voltage
Emitter-Base Voltage
50
V
V
5
1.5
Collector Current - Continuous
A
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ,
T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
TN6727A
Total Device Dissipation
Derate above 25°C
1
8
W
mW/°C
PD
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
50
°C/W
°C/W
RqJC
RqJA
125
Ó 1997 Fairchild Semiconductor Corporation
Page 1 of 2
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
40
50
5
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 1 mA
IE = 1 mA
VCB = 50 V
VEB = 5 V
V
100
100
nA
nA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS*
DC Current Gain
hFE
55
60
50
-
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 1A, VCE = 1 V
250
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
1.2
V
V
VCE(sat)
VBE(on)
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 1 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
30
25
pF
-
VCB = 10 V, IE = 0, f = 1MHz
Small Signal Current Gain
hfe
2.5
IC = 50 mA,VCE = 10 V, f=20MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Page 2 of 2
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FACT Quiet Series™
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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