TN6729AJ05Z [FAIRCHILD]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN;
| 型号： | TN6729AJ05Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN |
| 文件： | 总12页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN6729A
NZT6729
C
E
C
B
TO-226
C
SOT-223
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800
mA. Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
80
V
V
V
A
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
TN6729A
*NZT6729
PD
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
1.0
8.0
50
1.0
8.0
W
mW/ C
C/W
°
°
Rθ
°
JC
Thermal Resistance, Junction to Ambient
125
125
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
I = 100 A, I = 0
80
80
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
µ
C
E
IE = 1.0 mA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
5.0
0.1
10
A
A
µ
µ
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1.0 V
80
50
20
250
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
0.35
1.2
V
V
V
VCE(sat)
VBE(on)
SMALL SIGNAL CHARACTERISTICS
Small-Signal Current Gain
IC = 200 mA, VCE = 5.0 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
2.5
25
30
hfe
Collector-Base Capacitance
pF
Ccb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
3
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
200
2
1
VCE = 1.0 V
β = 10
150
125 °C
25 °C
100
- 40 °C
0.1
25 °C
125 °C
50
- 40 °C
0
0.01
0.01
0.02
0.05
0.1
0.5
1
10
100
1000
IC - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
β = 10
1
- 40 °C
- 40 °C
0.8
25 °C
25 °C
125 °C
0.6
125 °C
V CE = 5V
0.4
1
10
100
1000
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Base Capacitance
vs Collector-Base Voltage
Collector-Cutoff Current
vs Ambient Temperature
40
30
20
10
0
100
10
f = 1.0 MHz
VCB = 60V
1
0.1
0.01
0
4
8
12
16
20
24
28
25
50
75
100
125
V
- COLLECTOR-BASE VOLTAGE (V)
TA - AMBIE NT TEMP ERATURE ( C)
CB
°
Gain Bandwidth Product
vs Collector Current
Safe Operating Area TO-226 / SOT-223
10
250
200
150
100
50
V CE = 10V
1
*PULSED
OPERATION
0.1
T
= 25 °C
A
LIMIT DETERMINED
BY BV
CEO
0.01
0
1
10
100
1
10
100
1000
V CE- COLLECTOR-EMITTER VOLTAGE (V)
IC - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
TO-226
SOT-223
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
3
TO-226AE Tape and Reel Data
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
©2000 Fairchild Semiconductor International
SOT-223 Tape and Reel Data
SOT-223 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is
made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
F63TNR Label
Antistatic Cover Tape
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
852
F
852
F
852
F
852
F
014
014
014
014
SOT-223 Packaging Information
Standard
(no flow code)
Packaging Option
D84Z
SOT-223 Unit Orientation
Packaging type
TNR
TNR
500
Qty per Reel/Tube/Bag
Reel Size
2,500
13" Dia
7" Dia
Box Dimension (mm)
Max qty per Box
343x64x343 184x187x47
5,000
0.1246
0.7250
1,000
0.1246
0.1532
343mm x 342mm x 64mm
Weight per unit (gm)
Weight per Reel (kg)
F63TNR Label
Intermediate box for Standard
Note/Comments
F63TNR Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for D84Z Option
LOT: CBVK741B019
QTY: 3000
SPEC:
FSID: PN2222A
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
300mm minimum or
38 empty pockets
500mm minimum or
62 empty pockets
September 1999, Rev. B
©2000 Fairchild Semiconductor International
SOT-223 Tape and Reel Data, continued
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.292
+/-
0.0130
SOT-223
(12mm)
6.83
+/-0.10
7.42
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.50
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
1.88
+/-0.10
9.5
+/-0.025
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOT-223 Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Package Dimensions
SOT-223 (FS PKG Code 47)
1 : 1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
©2000 Fairchild Semiconductor International
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
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any manner without notice.
Preliminary
First Production
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supplementary data will be published at a later date.
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design.
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Obsolete
Full Production
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号：
TN6729AJ18Z
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN
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