TN6729A [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | TN6729A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
TN6729A
NZT6729
C
E
C
B
TO-226
C
SOT-223
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
80
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
A
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
TN6729A
*NZT6729
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
1.0
8.0
50
1.0
8.0
W
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
125
125
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
80
80
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
5.0
V
0.1
10
µA
µA
IEBO
Emitter-Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1.0 V
80
50
20
250
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
0.35
1.2
V
V
V
VCE(sat)
VBE(on)
SMALL SIGNAL CHARACTERISTICS
Small-Signal Current Gain
IC = 200 mA, VCE = 5.0 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
2.5
25
30
hfe
Collector-Base Capacitance
pF
Ccb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
2
1
200
β
= 10
VCE = 1.0 V
125 °C
150
100
50
25 °C
- 40 ºC
0.1
25 °C
125 ºC
- 40 °C
0.01
0
0.01
10
100
I C - COLLECTOR CURRENT (mA)
1000
0.02
0.05
0.1
0.5
1
IC - COLLECTOR CURRENT (mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
β
= 10
1
0.8
0.6
0.4
- 40 ºC
- 40 ºC
25 °C
25 °C
125 ºC
125 ºC
V CE= 5V
1
10
100
1000
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
20
10
0
100
10
f = 1.0 MHz
VCB = 60V
1
0.1
0.01
25
50
75
100
125
0
4
8
12
16
20
24
28
º
TA- AMBIENT TEMPERATURE ( C)
V
- COLLECTOR-BASE VOLTAGE (V)
CB
Gain Bandwidth Product
vs Collector Current
Safe Operating Area TO-226
10
250
200
150
100
50
V CE = 10V
1
0.1
*PULSED
OPERATION
T
= 25 °C
A
LIMIT DETERMINED
BY BV
CEO
0
0.01
1
10
100
1000
1
10
100
IC - COLLECTOR CURRENT (mA)
V CE- COLLECTOR-EMITTER VOLTAGE (V)
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
TO-226
SOT-223
0.25
0
0
25
50
75
100
125
150
TEMPERATURE
(
oC)
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