UR4120 [FAIRCHILD]
4A, 1200V Ultrafast Diodes; 4A ， 1200V超快二极管
| 型号： | UR4120 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 4A, 1200V Ultrafast Diodes |
| 文件： | 总5页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RURD4120, RURD4120S
Data Sheet
January 2002
4A, 1200V Ultrafast Diodes
Features
The RURD4120 and RURD4120S are ultrafast diodes with
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . <70ns
soft recovery characteristics (t < 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
rr
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49036.
Ordering Information
Packaging
PART NUMBER
PACKAGE
TO-251
TO-252
BRAND
UR4120
UR4120
JEDEC STYLE TO-251
RURD4120
ANODE
RURD4120S
CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e.,
RURD4120S9A.
CATHODE
(FLANGE)
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RURD4120, RURD4120S
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
1200
1200
1200
4
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
o
(T = 152 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
8
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
40
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
50
10
W
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
STG
-65 to 175
C
J
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
MIN
TYP
MAX
2.1
1.9
100
500
70
90
-
UNITS
V
V
I
I
= 4A
-
-
-
-
-
-
-
-
-
-
-
-
-
F
F
F
o
= 4A, T = 150 C
V
C
I
V
V
= 1200V
-
µA
µA
ns
R
R
R
o
= 1200V, T = 150 C
-
C
t
I
I
I
I
I
= 1A, dI /dt = 200A/µs
-
rr
F
F
F
F
F
F
= 4A, dI /dt = 200A/µs
-
ns
F
t
t
= 4A, dI /dt = 200A/µs
40
28
335
15
-
ns
a
F
= 4A, dI /dt = 200A/µs
-
ns
b
F
Q
= 4A, dI /dt = 200A/µs
-
nC
pF
RR
F
C
V
= 10V, I = 0A
-
J
R
F
o
R
3
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
b
RM
= Reverse recovery time.
RM
RM
Q
RR
C = Junction capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
100
10
20
o
175 C
10
o
100 C
1
0.1
o
o
175 C
25 C
o
100 C
0.01
1
o
25 C
0.001
0.5
0
200
400
600
800
1000
1200
0
0.5
1
1.5
2
2.5
3
V
, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
R
F
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
Typical Performance Curves (Continued)
75
60
45
30
15
0
100
80
60
40
20
0
o
T
= 25 C, dI /dt = 200A/µs
F
o
C
T
= 100 C, dI /dt = 200A/µs
F
C
t
t
rr
rr
t
a
t
a
t
b
t
b
0.5
1
4
0.5
1
4
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr b
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
rr
a
a
b
5
4
3
2
1
0
125
100
75
50
25
0
o
T
= 175 C, dI /dt = 200A/µs
F
C
DC
t
rr
SQ. WAVE
t
a
t
b
125
135
145
155
165
175
0.5
1
I , FORWARD CURRENT (A)
4
o
, CASE TEMPERATURE ( C)
C
T
F
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
75
60
45
30
15
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
RURD4120, RURD4120S
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
dI
DUT
CURRENT
SENSE
F
t
rr
I
F
R
G
dt
t
t
b
a
+
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I = 1A
L = 20mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
I
V
Q
1
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
UR470M100-1010
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 100V, 20% +Tol, 20% -Tol, 47uF
YSTONE
UR470M25-0605
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 25V, 20% +Tol, 20% -Tol, 47uF
YSTONE
©2020 ICPDF网 联系我们和版权申明