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2SC2735JTL-E  191930097  191930134  1771574  1N5367B  0505988000  105RSS050M  1N5365B  2KBP01M/3N254  192030386  
FDS6612A 单N沟道逻辑电平, PowerTrench MOSFET的 (Single N-Channel, Logic-Level, PowerTrench MOSFET)
.型号:   FDS6612A
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描述: 单N沟道逻辑电平, PowerTrench MOSFET的
Single N-Channel, Logic-Level, PowerTrench MOSFET
文件大小 :   163 K    
页数 : 7 页
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FDS6612A
PSPICE电气型号N沟道
.SUBCKT FDS6612A 2 1 3
* NOM TEMP = 25℃
* REV A - 2003年7月
钙12 8 1E- 9
CB 15 14 4.0E - 10
CIN 6 8 5.1E - 10
DBODY 7 5 DBODYMOD
DBREAK 5月11日DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 34.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE 1 9 3.84e - 9
LDRAIN 2 5 1.00E - 9
Lsource 3 7 4E- 9
RLgate 1 9 38.4
RLDRAIN 2 5 10
RLsource 3 7 40
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8E- 3
RGATE 9 20 4.2
RSLC1 5 51 RSLCMOD 1E- 6
RSLC2 5 50 1E3
RSOURCE 8 7 RSOURCEMOD 7.5E - 3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50值= { (V ( 5,51 ) / ABS (Ⅴ ( 5,51 ) ))* (PWR (Ⅴ ( 5,51 )/( 1E- 6 * 105 ),3) )}
.MODEL DBODYMOD D( IS = 7E - 15 RS = 6.1E - 3 N = 0.84 TRS1 = 1.7E - 3 TRS2 = 1.0E - 6
+ CJO = 3.2E - 10 TT = 10E - 9 ,M = 0.5 IKF = 0.3 XTI = 3.0 )
.MODEL dbreakmod D( RS = 1E - 1 TRS1 = 1.12e - 3 TRS2 = 1.25E - 6 )
.MODEL DPLCAPMOD D( CJO = 14E - 11 = 1E - 30 ,N = 10 ,M = 0.34 )
.MODEL MWEAKMOD NMOS ( VTO = 1.82 KP = 0.05 IS = 1E - 30 ,N = 10 TOX = 1 L = 1U W = 1U RG = 42 RS = 0.1 )
.MODEL MMEDMOD NMOS ( VTO = 2.1 KP = 6 IS = 1E - 30 ,N = 10 TOX = 1 L = 1U W = 1U RG = 4.2 )
.MODEL MSTROMOD NMOS ( VTO = 2.55 KP = 50 = 1E - 30 ,N = 10 TOX = 1 L = 1U W = 1U )
.MODEL RBREAKMOD RES ( TC1 = 0.83E - 3 TC2 = 1E- 7 )
.MODEL RDRAINMOD RES ( TC1 = 6E - 3 TC2 = 5E - 6 )
.MODEL RSLCMOD RES ( TC1 = 2.5E - 3 TC2 = 4.5E - 6 )
.MODEL RsourceMOD RES ( TC1 = 1.0E - 3 TC2 = 1E - 6 )
.MODEL RVTHRESMOD RES ( TC1 = -2.013E - 3 TC2 = -7E - 6 )
.MODEL RVTEMPMOD RES ( TC1 = -1.5E - 3 TC2 = 1E - 6 )
.MODEL S1AMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -4 VOFF = -3)
.MODEL S1BMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -3 VOFF = -4)
.MODEL S2AMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -1.3 VOFF = -0.5 )
.MODEL S2BMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -0.5 VOFF = -1.3 )
.ENDS
注:对于PSPICE模型的进一步讨论,请参阅
一种新的PSPICE子电路的功率MOSFET拥有全球
温度选项;
IEEE电力电子专家会议记录, 1991年,写的威廉· J·赫普和C.弗兰克·惠特利。
FDS6612A版本D( W)
LDRAIN
DPLCAP
10
RSLC1
51
RSLC2
5
51
-
ESG
+
LGATE
1
RLGATE
CIN
EVTEMP
RGATE +
18 -
9
20 22
6
8
EVTHRES
+ 19 -
8
6
MSTRO
LSOURCE
8
RSOURCE
RLSOURCE
S1A
12
13
8
S1B
CA
13
+
EGS
-
6
8
EDS
-
S2A
14
13
S2B
CB
+
5
8
8
22
RVTHRES
14
IT
15
17
RBREAK
18
RVTEMP
19
-
VBAT
+
7
源程序ê
3
-
50
RDRAIN
21
16
MWEAK
MMED
EBREAK
+
ESLC
RLDRAIN
DBREAK
5
2
11
+
17
18
-
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