RDF-06MS [FCI-CONNECTOR]
Bridge Rectifier Diode, 1A, 600V V(RRM),;
| 型号： | RDF-06MS |
| 厂家： | 
FCI CONNECTOR |
| 描述： | Bridge Rectifier Diode, 1A, 600V V(RRM), |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
1.0 Amp FAST RECOVERY
SINGLE PHASE SILICON BRIDGE
Description
Mechanical Dimensions
AC
AC
Add Suffix S for SMD.
Example: RDF-04MS = 400V/1 Amp SMD Part
Mechanical Data: Terminal Leads - Solderable per Mil Std. 202. Polarity - Molded
on Case. Mounting Position - Any. Weight - 0.04 Ounces, 1 Gram.
Features
n COMPACT SIZE
n
UNDERWRITERS LABORATORIES
RECOGNIZED
n LOW LEAKAGE CURRENT
n 50 AMP SURGE OVERLOAD RATING
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25oC.
RDF005 . . . 08 Series
Units
Maximum Ratings
RDF005
50
RDF01
100
70
RDF02
200
RDF04
400
RDF06
600
RDF08
800
Peak Repetitive Reverse Voltage...VRRM
RMS Reverse Voltage...VR(rms)
DC Blocking Voltage...VDC
Volts
Volts
Volts
35
140
280
420
560
50
100
200
400
600
800
Amps
Amps
Average Forward Rectified Current...IF(av)
............................................. 1.0 ...............................................
............................................. 50 ...............................................
TA = 40°C
Non-Repetitive Peak Forward Surge Current...IFSM
8.3 mS Single ½ Sine Wave Imposed on Rated Load
A2S
Point Rating for Fusing...(T < 8.3 mS)
............................................. 5.0 ...............................................
............................................. 1.3 ...............................................
Volts
Forward Voltage...VF
Bridge Element @ 1.0 Amp
DC Reverse Current...I
@ Rated DC BlockinRg Voltage
T = 25°C ............................................. 10 ...............................................
µA
mA
TJJ =125°C ............................................. 1.0 ...............................................
Reverse Recovery Time...tRR (Note 1)
Typical Thermal Resistance...RθJC
TC = 25°C
200
200
200
350
350
350
nS
°C/W
°C
............................................. 40 ...............................................
......................................... -55 to 150 ..........................................
Operating & Storage Temperature Range...TJ, TSTRG
Page 3-5
Data Sheet
1.0 Amp FAST RECOVERY
SINGLE PHASE SILICON BRIDGE
Forward Current Derating Curve
Non-Repetitive
Peak Forward Surge Current
1.0
.5
60
50
40
30
20
10
0
2
4 6
10 20
60
100
160
140
20
60 80 100 120
40
Number of Cycles @ 60 HZ
Ambient Temperature (°C)
Typical Reverse Characteristics
Typical Instantaneous Forward Characteristics
1
1.0
.1
TJ = 25°C
.1
.01
.6 .8 1.0 1.2 1.4
Volts
.2 .4
.01
0
60
120
Percent of Rated Peak Voltage
Typical Junction Capacitance
100
Electrical Description
Ratings at
25 Deg. C ambient
temperature
10
5
A
unless otherwise
specified.
TJ = 25°C
F = 1 MHZ
VSIG = 50m Vpp
Single Phase Half
Wave, 60 HZ
Resistive or
Inductive Load.
100
Reverse Voltage (Volts)
For Capacitive
Load, Derate
Current by 20%.
NOTES: 1. Reverse Recovery Cond., IF = .5A, IR = 1.0A, IRR = .25A.
Page 3-6
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