GBU801 [FCI]
8.0Amps Glass Passivated Single Phase Silico n Bridge; 8.0安培玻璃钝化单相硅铝ñ桥
| 型号： | GBU801 |
| 厂家： | 
FIRST COMPONENTS INTERNATIONAL |
| 描述： | 8.0Amps Glass Passivated Single Phase Silico n Bridge |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8.0Amps Glass Passivated
Single Phase Silicon Bridge
Machamical Dimensions
+
4.2 0.2
+
21.9 0.5
+
3.85 0.25
Descriptions
+
4.4 0.2
+
1.95 0.25
+
18.6 0.3
+
20.4 0.3
1.9 R. TYP.
(2PLACES)
+
_
10.8 0.5
~
+
~
+
3.4 0.2
+
16.0 0.4
+
0.2
1.3
+
5.1 0.5
GBU
Dimensions in millimeters(1mm =0.0394")
Features
Mechanical Data
Case: Molded plastic body
Ideal for P.C. Board mounting
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
High surge current capability
This series is UL listed under the Recognized
Component Index, file number E142814
The plastic material used carries Underwriters
Laboratory flammability recognition 94V-0
High temperature soldering guaranteed 265 C /10
seconds at 5 lbs (2.3kg) tension
Mounting Position:: Any
Weight: 3.8 grams (approx)
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
GBU GBU GBU GBU GBU GBU GBU GBU
Parameter
Symbol
VRRM
VRMS
VDC
unit
800
50
801 802
100 200
804
400
806 808 810 812
600 800 1000 1200
V
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
35
50
70 140
100 200
280
400
420
560 700 840
V
V
600 800 1000 1200
Maximum average forward rectified
output current at TA=100 C
8.0
IF(AV)
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
200
A
IFSM
I2 t
2sec
A
166
2.2
Rating for fusing ( t<8.3ms)
C / W
Typical thermal resistance per element(1)
ReJA
TJ,
TSTG
Operating junction and storage temperature
range
-55 to + 150
1.1
Max. instantaneous forward voltage drop
per leg at 6.0A
VF
V
Max. DC reverse current at rated Ta=25C
Max. DC reverse current at rated Ta=125C
IR
IR
5.0
uA
uA
500
Notes: Thermal resistance from Junction to Ambient on PC board mounting
8.0Amps Glass Passivated
Single Phase Silicon Bridge
o
Rating and Characteristic Curves ( TA= 25 C Unless otherwise noted )
GBU800 thru GBU810
Fig. 2 Maximum Non-repetitive Peak
Forward Surge Current
Fig. 1 Derating Curve for
Output Rectified Current
8.0
300
Heat Sink
mounting, Tc
8.3ms
Single half-sine-Wave
[JEDEC Method]
250
6.0
4.0
200
150
100
50
60Hz Resistive of
Inductive Load
Mounted on 4X4 inch
copper PC board, TA
1.27 mm lead length
2.0
0
1
10
100
Number of Cycles at 60HZ
0
50
100
150
o
Case Temperature, C
Fig. 4 Typical Reverse
Characteristics
10
1.0
0.1
.01
Fig. 3 Typical Instantaneous
Forward Characteristics
Tc= 100 C
100
40
20
10
TA= 25 C
4.0
1.0
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse
Voltage, %
0.1
Tj= 25 C
Pulse Width= 300us
2% duty cycle
Fig. 5 Typical Junction Capacitance
.01
0.6
400
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Instantaneous Forward
Voltage, Volts
100
50
Tj= 25 C
f= 1.0MHz
V
= 50mV p.p.
ing
10
1
1.5
2
10
100
Reverse Voltage, Volts
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2003 SEP ELECTRONIC CORP.
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