LP3000 [FILTRONIC]
2 W POWER PHEMT; 2 W功率PHEMT
| 型号： | LP3000 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | 2 W POWER PHEMT |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LP 3 0 0 0
2 W P OWER P HEMT
DRAIN
BOND
PAD (4X)
·
FEATURES
¨
33.5 dBm Output Power
at 1-dB Compression at 18 GHz
7 dB Power Gain at 18 GHz
30.5 dBm Output Power
SOURCE
BOND
PAD (2x)
¨
¨
at 1-dB Compression at 3.3V
45% Power-Added Efficiency
GATE
BOND
PAD (4X)
¨
DIE SIZE: 28.3X16.5 mils (720x420 mm)
DIE THICKNESS: 2.6 mils (65 mm)
BONDING PADS: 1.9X2.4 mils (50x60 mm)
·
DES CRIP TION AND AP P LICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 mm by 3000 mm Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged
ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other high-performance power amplifiers.
·
ELECTRICAL S P ECIFICATIONS @ TAm b ie n t = 2 5 °C
Parameter
Symbol
IDSS
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
Min
800
33
Typ
1060
33.5
6
Max
Units
mA
dBm
dB
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
1100
P-1dB
G-1dB
PAE
IMAX
GM
4
45
%
1700
900
15
mA
mS
mA
V
725
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
125
-2.0
VP
VDS = 2 V; IDS = 10 mA
IGS = 15 mA
-0.25
-12
-1.2
-15
|VBDGS
|
V
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD
|
IGD = 15 mA
-12
-16
20
V
Thermal Resistivity
frequency=18 GHz
QJC
°C/W
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/18/01
Em a il: sales@filss.com
LP 3 0 0 0
2 W P OWER P HEMT
·
ABS OLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
12
V
TAmbient = 22 ± 3 °C
Gate-Source Voltage
Drain-Source Current
Gate Current
VGS
IDS
-5
2xIDSS
30
V
mA
mA
W
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
—
IG
RF Input Power
PIN
1.2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
TCH
TSTG
PTOT
175
175
6.0
ºC
-65
ºC
W
TAmbient = 22 ± 3 °C
Notes:
·
·
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT º (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
·
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 6.0W – (0.040W/°C) x THS
where THS = heatsink or ambient temperature.
·
·
·
HANDLING P RECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
AS S EMBLY INS TRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
AP P LICATIONS NOTES & DES IGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.
P h o n e : (408) 988-1845
Fa x: (408) 970-9950
h ttp :// www.filss.com
Re vis e d : 1/18/01
Em a il: sales@filss.com
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