FFM102AG [FIRST]
1.0A Surface Mount Fast Recovery Rectifiers-50-1000V;
| 型号： | FFM102AG |
| 厂家： | 
FIRST SEMI |
| 描述： | 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V |
| 文件： | 总2页 (文件大小：1931K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFM101AG THRU FFM107AG
Chip Silicon Rectifier
1.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Package outline
DO-214AC(SMA)
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
0.110(2.80)
0.094(2.40)
0.067 (1.70)
0.039 (1.00)
• High current capability.
• Fast switching for high efficiency.
0.177(4.50)
0.153(3.90)
• High surge current capability.
0.012(0.305)
0.006(0.152)
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
0.097(2.45)
0.078(1.98)
Mechanical data
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
• Epoxy:UL94-V0 rated flame
0.222(5.66)
0.188(4.80)
• Case : Molded plastic
• Terminals : So
• P
d (millimeters)
MAX.
1.0
Symbol
IO
UNIT
A
MIN.
TYP.
e-wave superimposed on
C methode)
IFSM
30
A
RM TJ = 25OC
5.0
50
IR
μA
R = VRRM TJ = 100OC
Junction to ambient
Rθ
75
15
OC/W
pF
JA
CJ
ce
ure
f=1MHz and applied 4V DC reverse voltage
OC
+150
-55
TSTG
Operating
temperature
TJ, (OC)
*5
TRR
(nS)
*1
VRRM
(V)
*3
VR
(V)
*4
VF
(V)
*2
VRMS
SYMBOLS
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
FFM101AG
FFM102AG
FFM103AG
70
100
200
400
100
200
400
150
140
280
*3 Continuous reverse voltage
1.30
-55 to +150
FFM104AG
*4 Maximum forward voltage@IF=1.0A
600
420
560
700
600
250
500
FFM105AG
FFM106AG
FFM107AG
*5 Maximum Reverse recovery time, note 1
800
800
1000
1000
=0.5A, I
Note 1. Reverse recovery time test condition, I
F
R
=1.0A, IRR=0.25A
REV:1.0
Page 1/2
@ 2018 Copyright By American First Semiconductor
FFM101AG THRU FFM107AG
Typical Characteristics
Fig.1 Forward Current Derating Curve
Fig.2 Typical Reverse Characteristics
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TJ=125°C
10
1.0
TJ=25°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
25
50
75
100
125
150
175
00
20
40
60
80
100 120
140
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Typical Junction Capacitance
100
10
1
10
TJ=25°C
TJ=25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
Page 2/2
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