FFM203AFG [FIRST]
Chip Silicon Rectifier;型号: | FFM203AFG |
厂家: | FIRST SEMI |
描述: | Chip Silicon Rectifier |
文件: | 总3页 (文件大小:4196K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FFM201AFG THRU FFM207AFG
Chip Silicon Rectifier
SMAF
1
2.0A Fast Recovery
Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
•
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead- free parts meet RoHS requirments.
MAX.
2.0
Symbol
IO
UNIT
A
MIN.
TYP.
NS
lf sine-wave superimposed on
EDEC methode)
IFSM
50
A
VRRM TJ = 25OC
5.0
IR
μA
VR = VRRM TJ = 125OC
100
Junction to ambient
RθJA
CJ
65
40
OC/W
pF
itance
rature
f=1MHz and applied 4V DC reverse voltage
OC
+150
-55
TSTG
Operating
temperature
TJ, (OC)
*5
TRR
(nS)
*1
*3
VR
(V)
*4
VF
(V)
*2
VRMS
(V)
SYMBOLS
VRRM
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
FFM201AFG
FFM202AFG
FFM203AFG
100
200
400
70
100
200
400
150
140
280
420
560
700
*3 Continuous reverse voltage
1.30
-55 to +150
FFM204AFG
FFM205AFG
FFM206AFG
FFM207AFG
*4 Maximum forward voltage@IF=2.0A
600
600
250
500
*5 Maximum Reverse recovery time, note 1
800
800
1000
1000
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
REV:1.0
Page 1/3
@ 2018 Copyright By American First Semiconductor
FFM201AFG THRU FFM207AFG
Typical Characteristics
Fig.2 Typical Reverse Characteristics
100
Fig.1 Forward Current Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ=125°C
10
1.0
TJ=25°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
00
20
40
60
80
100 120
140
25
50
75
100
125
150
175
percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig.4 Typical Junction Capacitance
Fig.3 Typical Instaneous Forward
Characteristics
10
TJ=25°C
TJ=25°C
100
10
1
1.0
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
pulse with 300μs
1% duty cycle
0.01
0.1
1.0
10
100
0.0
0.5
1.0
1.5
2.0
2.5
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
10
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
Page 2/3
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FFM201AFG THRU FFM207AFG
Package Dimension
SMAF
Unit: mm
∠ALL ROUND
∠ALL ROUND
M
A
V
HE
D
E
g
g
A
Top View
Bottom View
HE
∠
g
UNIT
mm
A
C
D
E
e
max
min
max
min
1.2
0.9
47
0.20
0.12
7.9
3.7
3.3
2.7
2.4
106
94
1.6
1.3
63
51
1.2
0.8
47
4.9
4.4
7°
146
130
193
173
mil
35
4.7
31
The recommended mounting pad size
1.6
(63)
1.6
(63)
2.2
(86)
mm
Unit :
(mil)
Page 3/3
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