FFM205BG [FIRST]
Chip Silicon Rectifier;
| 型号： | FFM205BG |
| 厂家： | 
FIRST SEMI |
| 描述： | Chip Silicon Rectifier |
| 文件： | 总3页 (文件大小：4119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFM201BG THRU FFM207BG
Chip Silicon Rectifier
2.0A Fast Recovery
Rectifiers-50-1000V
Package outline
DO-214AA(SMB)
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
•
optimize board space.
1
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
2
• Lead- free parts meet RoHS requirments.
Mechanical data
• Epoxy:UL94-V0 rated flame r
• Case : Molded plastic,
• Terminals : Solde
• Pola
and (millimeters)
MAX.
2.0
Symbol
IO
UNIT
A
MIN.
TYP.
NS
lf sine-wave superimposed on
EDEC methode)
IFSM
60
A
VRRM TJ = 25OC
5.0
IR
μA
VR = VRRM TJ = 125OC
100
Junction to ambient
RθJA
CJ
60
28
OC/W
pF
itance
rature
f=1MHz and applied 4V DC reverse voltage
OC
+150
-55
TSTG
Operating
temperature
TJ, (OC)
*5
TRR
(nS)
*1
*3
VR
(V)
*4
VF
(V)
*2
VRMS
(V)
SYMBOLS
VRRM
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
FFM201BG
FFM202BG
FFM203BG
100
200
400
70
100
200
400
150
140
280
420
560
700
*3 Continuous reverse voltage
1.30
-55 to +150
FFM204BG
FFM205BG
FFM206BG
FFM207BG
*4 Maximum forward voltage@IF=2.0A
600
600
250
500
*5 Maximum Reverse recovery time, note 1
800
800
1000
1000
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
REV:1.0
Page 1/3
@ 2018 Copyright By American First Semiconductor
FFM201BG THRU FFM207BG
Typical Characteristics
Fig.1 Forward Current Derating Curve
Fig.2 Typical Reverse Characteristics
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ=125°C
10
1.0
TJ=25°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
25
50
75
100
125
150
175
00
20
40
60
80
100 120
140
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Typical Junction Capacitance
10
TJ=25°C
TJ=25°C
100
10
1
1.0
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
10
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
Page 2/3
www.First-semi.com
FFM201BG THRU FFM207BG
Package Dimension
DO-214AA (SMB)
L
A
E
V
M
A
E1
SMB mechanical data
E1
5.59
5.08
220
200
A1
L
b
C
0.305
0.152
12
UNIT
A
E
D
max
min
max
min
2.44
2.13
96
4.70
4.06
185
160
3.94
3.3
0.20
0.05
7.9
1.5
0.8
59
2.2
1.9
87
mm
mil
155
130
2.0
32
6
75
84
The recommended mounting pad size
2.4
2.4
2.2
(94)
(94)
(86)
mm
(mil)
Unit ：
Page 3/3
www.First-semi.com
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