FFM303CG [FIRST]
Chip Silicon Rectifier;
| 型号： | FFM303CG |
| 厂家： | 
FIRST SEMI |
| 描述： | Chip Silicon Rectifier |
| 文件： | 总3页 (文件大小：2946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFM301CG THRU FFM307CG
Chip Silicon Rectifier
3.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Package outline
DO-214AB(S)
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
•
1
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
2
• Glass passivated chip junction.
• Lead- free parts meet RoHS requirments.
Mechanical data
• Epoxy: UL94-V0 rated frame r
• Case: Molded plastic, D
• Terminals: Solder
Method 202
• Polari
•
s and (millimeters)
MAX.
UNIT
A
MIN.
TYP.
NS
= 55oC
Symbol
IO
3.0
90
alf sine-wave superimposed on
JEDEC methode)
IFSM
A
= VRRM TJ = 25OC
5.0
IR
μA
VR = VRRM TJ = 100OC
100
Junction to ambient
RθJA
CJ
45
40
OC/W
pF
citance
erature
f=1MHz and applied 4V DC reverse voltage
OC
+150
-55
TSTG
Operating
temperature
TJ, (OC)
*5
TRR
(nS)
*1
*3
VR
(V)
*4
VF
(V)
*2
VRMS
(V)
SYMBOLS
VRRM
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
35
50
FFM301CG
FFM302CG
FFM303CG
100
200
400
70
100
200
400
150
140
280
*3 Continuous reverse voltage
1.30
-55 to +150
FFM304CG
FFM305CG
FFM306CG
FFM307CG
*4 Maximum forward voltage@IF=3.0A
600
420
560
700
600
250
500
*5 Maximum Reverse recovery time, note 1
800
800
1000
1000
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
REV:1.0
Page 1/3
@ 2018 Copyright By American First Semiconductor
FFM301CG THRU FFM307CG
Typical Characteristics
Fig.2 Typical Reverse Characteristics
100
Fig.1 Maximum Average Forward Current Rating
4.0
3.5
3.0
2.5
TJ=125°C
10
2.0
1.5
1.0
1.0
TJ=25°C
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
0.1
25
50
75
100
125
150
175
00
20
40
60
80
100 120
140
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Typical Junction Capacitance
10
TJ=25°C
TJ=25°C
100
10
1
1.0
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
Page 2/3
www.First-semi.com
FFM301CG THRU FFM307CG
Package Dimension
DO-214AB (SMC)
E
A
L
V
M
A
E1
SMC mechanical data
E1
A1
L
b
C
UNIT
mm
A
E
D
max
min
max
min
2.62
2.00
103
79
7.0
6.5
276
256
6.2
5.6
8.0
7.6
0.21
0.05
8.3
0.31
0.15
12
1.6
0.9
63
3.25
2.75
128
108
244
220
315
299
mil
2.0
5.9
35
The recommended mounting pad size
4.1
4.1
3.8
(160)
(160)
(150)
mm
Unit ：
(mil)
Page 3/3
www.First-semi.com
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