FIR7N65AALG [FIRST]

650V N-Channel MOSFET;


型号：	FIR7N65AALG
厂家：	FIRST SEMI
描述：	650V N-Channel MOSFET
文件：	总9页 (文件大小：4066K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FIR7N65ABPG/ALG

650V N-Channel MOSFET

Features:

PIN Connection TO-251/252

□ Low Intrinsic Capacitances.

□ Excellent Switching Characteristics.

□ Extended Safe Operating Area.

□ Unrivalled Gate Charge :Qg=28nC (Typ.).

□ BVDSS=650V,I_D=7A

TO‐251

TO‐252

□ R_DS(on) : 1.30Ω (Max) @V_G=10V

□ 100% Avalanche Tested

Schematic dia ram

Marking Diagram

YAWW

= Year

YAWW

FIR7N65ABP

= Assembly Location

= Work Week

FIR7N65AL

= Specific Device Code

FIR7N65ABP/AL

Absolute Maximum Ratings ^(Ta^{=25℃ unless otherwise noted)}

Symbol

Parameter

Value

650

7.0

Unit

V_DSS

Drain-Source Voltage

Drain Current

T_j=25℃

I_D

T_j=100℃

3.2

V_GS(TH)

E_AS

Gate Threshold Voltage

±30

230

Single Pulse Avalanche Energy (note1)

I_AR

P_D

T_j

Avalanche Current (note2)

Power Dissipation (Tj=25℃)

Junction Temperature(Max)

Storage Temperature

7.0

℃

150

T_stg

-55~+150

300

℃

Maximum lead temperature for soldering purpose,1/8” from

case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

3.13

110

Unit

℃/W

R_θJC

R_θJA

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

REV:1.0

Page 1/9

@ 2018 Copyright By American First Semiconductor

FIR7N65ABPG/ALG

Electrical Characteristics (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

I_D=250μA，V_GS=0

650

0.8

Breakdown Voltage Temperature

Coefficient

I_D=250μA ,Reference

to 25℃

△BVDSS/△TJ

V/℃

V_DS=650V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

μA

V_DS=520V, Tj=125℃

Gate-body leakage Current,

Forward

Gate-body leakage Current,

Reverse

I_GSSF

I_GSSR

On Characteristics

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

100

-100

V_GS(TH)

R_DS(ON)

Date Threshold Voltage

I_D=250μA,V_DS=V_GS

Static Drain-Source

On-Resistance

I_D=3.5A,V_GS=10V

ꢀ

1.30

Dynamic Characteristics

Ciss

Coss

Crss

Input Capacitance

955

100

V_DS=25V，V_GS=0，

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

Td(on)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

110

190

V_DD=325V，I_D=7A

R_G=25ꢀ (Note 3,4)

Td(off)

4.5

120

V_DS=520V,V_GS=10V，

I_D=7A (Note 3,4)

Qgs

Qgd

Drain-Source Diode Characteristics and Maximum Ratings

Max. Diode Forward Current

Max. Pulsed Forward Current

Diode Forward Voltage

1.4

I_SM

V_SD

Trr

I_D=7A

I_S=7A,V_GS=0V

diF/dt=100A/μs

(Note3)

Reverse Recovery Time

400

Qrr

Reverse Recovery Charge

3.3

μC

Notes : 1, L=10mH, IAS=7A, VDD=50V, RG=25ꢀ, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature

3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4, Essentially Independent of Operating Temperature

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FIR7N65ABPG/ALG

Typical Characteristics

V_GS

Top :

15.0 V

10.0V

8.0V

7.0V

6.0V

5.5V

10¹

10⁰

10¹

10⁰

Bottom: 5.0V

150 C

-55 C

25 C

※

Notes :

1. 250µ s Pulse Test

2. T_C= 25

※

Notes :

℃

1. V_DS= 40V

2. 250µ s Pulse Test

-1

10¹

V_GS, Gate-Source Voltage [V]

V , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

3.0

10¹

10⁰

2.5

2.0

1.5

1.0

V_GS= 10V

150℃

25℃

V_GS= 20V

※

Notes :

1. V_GS= 0V

2. 250µ s Pulse Test

※

Note: T = 25

℃

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I_D, DrainCurrent [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000

1600

1200

800

400

_iss= C_gs+ C_gd(C_ds= shorted)

_oss= C + C

_rss= C^ds

V_DS= 130V

V_DS= 325V

V_DS= 520V

iss

oss

※

Note ;

1. V_GS= 0 V

2. f = 1 MHz

rss

※

Note : I_D= 7A

-1

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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FIR7N65ABPG/ALG

Typical Characteristics (Continued)

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.9

0.8

※

Notes :

※

Notes :

1. V = 0 V

2. I_D^G=^S250 µ A

1. V = 10 V

2. I_D^G=^S3.5 A

-100

-50

100

150

200

-100

-50

100

150

200

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R _DS(on)

10 µs

10¹

10⁰

10^-1

10^-2

100

1 ms

10 ms

µs

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

100

125

150

10⁰

10¹

10²

10³

T_C, Case Temperature [℃]

V_DS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 9-2. Maximum Safe Operating Area

for FIR7N65AFG

D = 0 .5

10 ⁰

0 .2

0 .1

0 .0 5

10 ^-1

※

N otes

1. Z

(t)

= 2.4 ℃ /W M ax.

2. D^θu^Jt^Cy Factor, D =t₁/t₂

0 .0 2

0 .0 1

3. T_JM

T_C

P _{D M}* Z_{θ J C}(t)

P_DM

t₁

10 ^-2

sin g le p u lse

t₂

1 0^-5

10 ^-4

1 0^-3

10 ^-2

10 ^-1

1 0⁰

10 ¹

t₁, S q u are W ave P ulse D u ra tio n [sec]

Figure 11-2. Transient Thermal Response Curve for FIR7N65AFG

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FIR7N65ABPG/ALG

Gate Charge Test Circuit & Waveform

Page 5/9

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FIR7N65ABPG/ALG

Peak Diode Recovery dv/dt Test Circuit & Waveform

Page 6/9

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FIR7N65ABPG/ALG

Unit: mm

Package Dimension

TO-251

NOM

SYMBOL

MIN

MAX

2.20

0.97

0.72

0.71

5.23

0.47

0.46

6.00

2.30

1.07

0.78

0.76

5.33

0.53

0.51

6.10

2.38

1.17

0.85

0.81

5.46

0.58

0.56

6.20

5.30REF

6.60

4.83

2.286BSC

16.40

9.40

1.02

1.80

7°

6.50

4.70

6.70

4.92

16.10

9.20

0.90

1.70

5°

16.60

9.60

1.25

1.90

9°

5°

7°

9°

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FIR7N65ABPG/ALG

Package Dimension

TO-252

Unit: mm

Page 8/9

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FIR7N65ABPG/ALG

Declaration

FIRST reserves the right to change the specifications, the same specifications of products due to different

packaging line mold, the size of the appearance will be slightly different, shipped in kind, without notice!

Customers should obtain the latest version information before ordering, and verify whether the relevant

information is complete and up-to-date.

Any semiconductor product under certain conditions has the possibility of failure or failure,The buyer has the

responsibility to comply with safety

standards and take safety measures when using FIRST products for system design and manufacturing,To

avoid To avoid potential failure risks, which may cause personal injury or property damage!

Product promotion endless, our company will wholeheartedly provide customers with better products!

ATTACHMENT

Revision History

Date

REV

Description

Page

2018.01.01

1.0

Initial release

Page 9/9

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