MBR1200TG [FIRST]
Reverse Voltage: 20 to 200 Volts;
| 型号： | MBR1200TG |
| 厂家： | 
FIRST SEMI |
| 描述： | Reverse Voltage: 20 to 200 Volts |
| 文件： | 总2页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR120TG THRU MBR1200TG
Schottky Barrier Rectifier
Reverse Voltage: 20 to 200 Volts
Forward Current: 1.0 Ampere
Package outline
R-1
Features
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
• Metal silicon junction, majority carrier conduction
•
Low power loss, high efficiency
0.787(20.0)
MIN.
• High current capability, Low forward voltage drop
• High surge capability
0.102(2.6)
0.091(2.3)
DIA.
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
• High temperature soldering guaranteed:
0.126(3.2)
0.106(2.7)
。
260 C/10 seconds at terminals
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
0.787(20.0)
MIN.
0.025(0.65)
0.021(0.55)
DIA.
Mechanical data
• Case: R-1 molded plastic body
• Terminals: Plated axial leads, solderable per MIL-STD-750,
Dimensions in inches and (millimeters)
Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
Weight: 0.007 ounce, 0.20 gram
•
Maximum Ratings And Electrical Characteristics
• Ratings at 25 C ambient temperature unless otherwise specified.
。
• Single phase, half wave, resistive or inductive load.
• For capacitive load derate by 20%.
MBR
120
TG
MBR
130
TG
MBR
140
TG
MBR
150
TG
MBR
160
TG
MBR
180
TG
MBR
1100
TG
MBR
1150
TG
MBR
1200
TG
Type Number
Symbols
Units
2
1
2
0
4
0
3
2
3
0
1
0
4
2
4
0
8
0
5
3
5
0
5
0
6
4
6
0
2
0
8
5
8
0
7
0
1
0
0
2
0
0
1
5
0
M
a
x
i
m
u
m
m
r
e
p
e
t
i
t
i
v
e
a
p
e
a
k
r
e
v
e
r
s
e
v
o
l
t
a
g
e
e
V
V
V
R
R
M
V
V
V
o
o
o
l
l
l
t
t
t
s
s
s
M
a
x
i
m
u
R
M
S
v
o
l
t
g
e
7
1
1
4
0
R
M
S
1
0
5
1
0
0
2
0
0
M
M
a
a
7
x
x
5
i
i
m
m
u
u
.
m
m
D
C
b
l
o
c
k
i
n
g
v
o
l
t
a
g
e
1
5
0
D
C
a
v
m
e
)
r
a
g
a
e
d
f
o
r
w
g
a
t
r
h
d
(
r
e
e
e
c
t
i
f
i
e
.
d
1
c
)
u
r
r
n
t
1
.
0
I
(
A
V
)
A
m
p
p
0
.
3
"
(
9
5
m
l
e
l
e
n
s
F
i
g
s
P
e
a
k
-
f
o
r
w
e
e
a
s
r
d
s
u
r
i
g
m
e
p
c
o
u
s
r
r
e
d
n
o
t
n
8
.
3
m
t
s
l
i
n
g
l
e
h
a
l
f
s
i
n
e
w
E
a
v
u
p
o
e
r
)
e
r
a
e
d
o
a
d
4
0
.
0
I
F
S
M
A
m
s
(
J
E
D
C
m
t
h
d
M
a
x
i
m
u
m
i
n
s
t
a
n
t
a
n
e
o
u
s
s
f
o
r
w
a
r
d
v
o
l
t
a
g
e
0
.
5
5
0
.
7
0
V
F
0
.
9
5
0
.
9
0
0
.
8
5
V
o
l
t
s
a
t
1
.
0
A
(
N
o
t
e
1
)
M
a
x
i
m
u
a
(
m
i
n
a
te 1 )
s
t
t
e
a
d
n
t
D
a
C
n
e
b
o
u
c
r
e
v
e
r
s
e
0
.
2
T
T
=
2
5
C
A
A
c
u
r
r
e
n
t
e
t
r
l
o
k
i
n
g
I
R
m
A
=
1
0
0
C
1
0
v
o
l
t
a
g
N
o
T
y
p
i
c
a
l
j
u
n
c
t
i
o
n
c
a
p
a
c
i
t
a
n
c
e
(
N
o
t
e
3
)
1
1
0
C
J
PF
T
y
p
i
c
a
l
t
h
e
r
m
a
l
r
e
s
i
s
t
a
n
c
e
(
N
o
t
e
2
)
5
0
.
0
R
J
A
C
/
W
O
p
e
r
a
t
i
n
g
j
u
n
c
t
i
o
n
t
e
m
p
e
r
a
t
u
r
e
r
a
n
g
e
C
C
-
6
5
t
o
+
1
5
0
T
J
S
t
o
r
a
g
e
t
e
m
p
e
r
a
t
u
r
e
r
a
n
g
e
-
6
5
t
o
+
1
5
0
T
S
T
G
Notes
:
1
2
3
.
.
.
P
u
e
e
l
s
r
a
e
m
s
t
a
u
e
l
s
t
re
d
:
3
0
0
a
1
s
p
(
H
u
l
s
o
a
e
m
n
w
j
d
i
u
r
d
n
e
t
h
c
e
,
t
1
%
n
e
d
u
t
a
y
c
m
g
y
b
e
c
l
e
n
f
T
h
s
i
s
t
n
c
e
f
r
i
o
t
o
i
e
t
4
)
V
e
v
r
t
o
i
c
a
s
l
P
.
C
.
B
.
m
o
u
n
t
e
d
,
0
.
5
"
(
1
2
.
7
m
m
)
l
e
a
d
l
e
n
g
t
h
M
r
e
a
t
.
0
M
z
v
r
s
v
o
l
t
a
o
.
0
l
t
Page 1/2
@ 2010 Copyright By American First Semiconductor
MBR120TG THRU MBR1200TG
Rating and characteristic curves
F
I
G
.
2
-M
A
X
I
M
U
M
N
D
O
N
-
R
E
P
E
T
I
T
I
V
E
P
E
A
K
F
I
G
.
1
-
F
O
W
A
R
D
C
U
R
R
E
N
T
D
E
R
A
T
I
N
G
C
U
R
V
E
F
O
R
W
A
R
S
U
R
G
E
C
U
R
R
E
N
T
1
50
0.75
0.5
T
8
J
=
m
T
J
M
A
X
G
40
30
20
.
3
s
S
I
N
L
E
o
H
d
A
)
L
F
S
I
N
E
-
W
A
V
E
(
J
E
D
E
C
M
e
t
h
R
E
3
S
7
I
S
5
T
"
I
V
E
.
O
R
m
I
N
)
D
U
A
C
D
T
I
V
E
L
O
A
D
0.25
0
0
.
(
9
5
m
L
E
L
E
N
G
T
H
10
0
0
25
50
75
100
125
150
175
L
E
A
D
T
E
M
P
E
R
A
T
U
R
E
(
C
)
1
10
100
N
U
M
B
E
R
O
F
C
Y
C
L
E
S
A
T
6
0
H
z
F
I
G
.
3
-
T
Y
P
I
C
A
L
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
F
I
G
.
4
-
T
Y
P
I
C
A
L
R
E
V
E
R
S
E
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
100
50
10
M B R 120TG -M B R 140TG
M B R 150TG -M B R 1200TG
10
T
J
=
1
2
5
C
T
J
=
1
5
0
C
T
J
=
1
2
5
C
P
U
L
S
E
W
I
D
T
H
=
3
0
0
S
1
%
D
U
T
Y
C
Y
C
L
E
1.0
0.1
1
T
J
=
1
0
0
C
T
J
=
2
5
C
0.1
0.01
M B R 120TG -M B R 140TG
M B R 150TG -M B R 1200TG
T
J
=
2
5
C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
O
L
T
S
)
P
ER
C
E
N
T
O
F
R
A
T
E
D
P
E
A
K
R
E
V
E
R
S
E
V
O
L
T
A
G
E
%
F
I
G.
5
-
T
Y
P
I
C
A
L
J
U
N
CT
I
O
N
C
A
P
A
C
I
T
A
N
C
E
F
I
G
.
6
-
T
Y
P
I
C
A
L
T
R
A
N
S
I
E
N
T
T
H
E
R
MA
L
I
M
P
E
D
A
N
C
E
100
400
100
10
T
J
=
2
5
C
f
=1. 0M H Z
s i g= 5 0m Vp- p
V
1
M B R 120TG -M B R 140TG
M B R 150TG -M B R 1200TG
10
0.1
0.1
1
10
100
0.01
0.1
1
10
100
R
E
V
E
R
S
E
V
O
L
T
A
G
E
.
V
O
L
T
S
T
,
P
U
L
S
E
D
U
R
A
T
I
O
N
,
s
e
c
.
Page 2/2
www.First-semi.com
相关型号：
MBR120100CTA
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
MICROSEMI
©2020 ICPDF网 联系我们和版权申明