FFM205-L [FORMOSA]

Chip Silicon Rectifier - Fast recovery type; 芯片硅整流 - 快速恢复型


型号：	FFM205-L
厂家：	FORMOSA MS
描述：	Chip Silicon Rectifier - Fast recovery type 芯片硅整流 - 快速恢复型
文件：	总2页 (文件大小：75K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Chip Silicon Rectifier

Formosa MS

FFM201-L THRU FFM207-L

Fast recovery type

Features

SMA-L

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.205(5.2)

0.189(4.8)

0.012(0.3) Typ.

0.110(2.8)

0.094(2.4)

For surface mounted applications.

Exceeds environmental standards of MIL-S-19500 /

228

0.181(4.6)

0.165(4.2)

Low leakage current.

0.075(1.9)

0.067(1.7)

0.040(1.0) Typ.

0.040 (1.0) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDEC DO-214AC

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

Weight : 0.0015 ounce, 0.05 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

2.0

UNIT

Ambient temperature = 55 C

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

5.0

100

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

T_STG

-55

+150

Operating

MARKING

SYMBOLS

V_RRM

V_RMS

V_R

V_F

T_RR

temperature

CODE

( C)

(V)

(nS)

FFM201

FFM202

FFM203

FFM204

FFM205

FFM206

FFM207

F21

F22

F23

F24

F25

F26

F27

100

200

400

600

800

1000

100

200

400

600

800

1000

150

140

280

420

560

700

*1 Repetitive peak reverse voltage

*2 RMS voltage

1.3

-55 to +150

250

500

*3 Continuous reverse voltage

*4 Maximum forward voltage

*5 Reverse recovery time

RATINGAND CHARACTERISTIC CURVES (FFM201-L THRU FFM207-L)

FIG.1-TYPICAL FORWARD

CHARACTERISTICS

FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE

2.4

2.0

1.6

1.2

6.0

2.0

Single Phase

Half Wave 60Hz

Resistive Or Inductive Load

0.8

0.4

100

120

140

160

180

200

Tj=25 C

AMBIENT TEMPERATURE ( C)

Pulse Width 300us

1% Duty Cycle

0.2

FIG.4-MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

.02

.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE,(V)

FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE

RECOVERY TIME CHARACTERISTICS

8.3ms Single Half

Tj=25 C

Sine Wave

50W

10W

NONINDUCTIVE

JEDEC method

(

)

(+)

D.U.T.

25Vdc

PULSE

GENERATOR

(NOTE 2)

(approx.)

100

(

)

(+)

NUMBER OF CYCLES AT 60Hz

OSCILLISCOPE

(NOTE 1)

NON-

INDUCTIVE

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

FIG.5-TYPICAL JUNCTION CAPACITANCE

trr

+0.5A

-0.25A

-1.0A

.01

.05

100

1cm

SET TIME BASE FOR

50 / 10ns / cm

REVERSE VOLTAGE,(V)

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